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Applied Physics Letters / Volume 99 / Issue 3 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 99, 033108 (2011); http://dx.doi.org/10.1063/1.3612913 (3 pages)

Post-complementary metal-oxide-semiconductor vertical and molecular transistors: A platform for molecular electronics

Elad D. Mentovich and Shachar Richter

School of Chemistry and Nanotechnology and Nanoscience institute, Aviv University, Ramat Aviv, Tel Aviv 69978, Israel

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(Received 29 December 2010; accepted 22 June 2011; published online 21 July 2011)

We demonstrate two types of post-complementary vertical-metal-insulator tunneling transistor in which a self-assembled monolayer is coupled to the channel of one of them. It is found that the properties of the molecular device are better than those of similar transistors in which these molecules are absent. The molecular transistor exhibits higher currents than the non-molecular device and shows negligible leakage currents, with clear features which are attributed to the properties of the molecules.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

CMOS integrated circuits, molecular electronics, MOSFET

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3612913

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

    K. Fujimaru, R. Sasajima, and H. Matsumura, J. Appl. Phys. 85, 6912 (1999)JAPIAU000085000009006912000001.

    R. Sasajima, K. Fujimaru, and H. Matsumura, Appl. Phys. Lett. 74, 3215 (1999)APPLAB000074000021003215000001.


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