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18 Jul 2011

Volume 99, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 032501 (2011); http://dx.doi.org/10.1063/1.3610947 (3 pages)

G. X. Miao, M. D. Mascaro, C. H. Nam, C. A. Ross, and J. S. Moodera
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Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si

A. R. Stegner, H. Tezuka, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, K. M. Itoh, and M. S. Brandt

Appl. Phys. Lett. 99, 032101 (2011); http://dx.doi.org/10.1063/1.3606548 (3 pages)

Online Publication Date: 18 July 2011

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Electron paramagnetic resonance (EPR) experiments on boron acceptors in isotopically engineered 28Si samples with different degrees of chemical and isotopic purity are reported. The strong suppression of isotope-induced broadening effects in this material allows a direct observation of the linear correlation between the width of the inter-subband Δm = 1 EPR line and the concentrations of carbon, oxygen, and boron point defects down to a total concentration of ≈2 × 1015 cm−3. When the impurity level is decreased further, the linewidth does not fall below 2.3 ± 0.2 mT, for which we discuss possible origins.
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71.55.Cn Elemental semiconductors
61.72.uf Ge and Si
76.30.Kg Rare-earth ions and impurities
61.72.J- Point defects and defect clusters

Tuning of anisotropy in two-electron quantum dots by spin-orbit interactions

Y. Liu, F. Cheng, X. J. Li, F. M. Peeters, and Kai Chang

Appl. Phys. Lett. 99, 032102 (2011); http://dx.doi.org/10.1063/1.3610961 (3 pages) | Cited 3 times

Online Publication Date: 18 July 2011

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We investigate the influence of the spin-orbit interactions (SOIs) on the electron distribution and the optical absorption of a two-electron quantum dot. It is shown that the interplay between the SOIs makes the two-electron quantum dot behave like two laterally coupled quantum dots and the anisotropic distribution can be rotated from [110] to [1math0] by reversing the direction of the perpendicular electric field and detect it through the optical absorption spectrum.
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73.21.La Quantum dots
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.67.Hc Quantum dots
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth

Kaoru Toko, Yasuharu Ohta, Takanori Tanaka, Taizoh Sadoh, and Masanobu Miyao

Appl. Phys. Lett. 99, 032103 (2011); http://dx.doi.org/10.1063/1.3611904 (3 pages) | Cited 6 times

Online Publication Date: 21 July 2011

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High-quality Ge-on-insulators (GOIs) are essential structures for high-performance transistors on an Si platform. We developed a rapid-melting-growth process for amorphous Ge (a-Ge) by optimizing the cooling rate and the underlying insulating materials. The effects of the solidification process for molten Ge on hole generation and spontaneous nucleation in Ge were determined. In addition, nucleation in the a-Ge matrix was found to be drastically suppressed by substituting SiO2 underlayers with SiN underlayers. By combining high cooling rates (10.5–11.5 °Cs−1) and SiN underlayers, we obtained ultra-long single crystal GOI strips (1 cm) with high hole mobilities (> 1000 cm2V−1s−1). This chip-size formation of high-quality GOI will facilitate the development of advanced high-speed Ge-based devices.
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85.30.Tv Field effect devices

Hot electron transmission in metals using epitaxial NiSi2/n-Si(111) interfaces

S. Parui, B. Wit, L. Bignardi, P. Rudolf, B. Kooi, B. J. van Wees, and T. Banerjee

Appl. Phys. Lett. 99, 032104 (2011); http://dx.doi.org/10.1063/1.3610458 (3 pages) | Cited 2 times

Online Publication Date: 21 July 2011

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We have investigated hot electron transmission across epitaxial metal-disilicide/n-Si(111) interfaces using ballistic electron emission microscopy (BEEM). Different crystal orientations of epitaxial NiSi2 were grown on a Si(111) substrate using molecular beam epitaxy. The presence of different interfaces of NiSi2 on Si(111) were confirmed by high resolution transmission electron microscopy. Electrical transport measurements reveal a clear rectifying Schottky interface with a barrier height of 0.69 eV. However, using BEEM, three different regions with different transmissions and Schottky barrier heights of 0.65 eV, 0.78 eV, and 0.71 eV are found. The addition of a thin Ni film on the NiSi2 layer strongly reduces the transmission in all the three regions and interestingly, almost equalizes the transmission across them.
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73.40.Ns Metal-nonmetal contacts
73.50.Mx High-frequency effects; plasma effects
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
72.20.Ht High-field and nonlinear effects
72.30.+q High-frequency effects; plasma effects
73.30.+y Surface double layers, Schottky barriers, and work functions

Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state

Xilin Zhou, Liangcai Wu, Zhitang Song, Feng Rao, Yan Cheng, Cheng Peng, Dongning Yao, Sannian Song, Bo Liu, Songlin Feng, and Bomy Chen

Appl. Phys. Lett. 99, 032105 (2011); http://dx.doi.org/10.1063/1.3614553 (3 pages) | Cited 6 times

Online Publication Date: 22 July 2011

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The phase change memory with monolayer chalcogenide film (Si18Sb52Te30) is investigated for the feasibility of multilevel data storage. During the annealing of the film, a relatively stable intermediate resistance can be obtained at an appropriate heating rate. The transmission electron microscopy in situ analysis reveals a conversion of crystallization mechanism from nucleation to crystal growth, which leads a continuous reduction in the degree of disorder. It is indicated from the electrical properties of the devices that the fall edge of the voltage pulse is the critical factor that determines a reliable triple-level resistance state of the phase change memory cell.
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84.30.Sk Pulse and digital circuits
64.70.kg Semiconductors
73.61.Le Other inorganic semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system

Chongyun Jiang, Hui Ma, Jinling Yu, Yu Liu, and Yonghai Chen

Appl. Phys. Lett. 99, 032106 (2011); http://dx.doi.org/10.1063/1.3610966 (3 pages)

Online Publication Date: 22 July 2011

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In this letter, we studied the polarization dependent current excited by near- and mid-infrared radiations in InAs nanowires patterned quasi two-dimensional structures. We observed a current with a predominated direction along the wires at normal incidence of mid-infrared radiation and attributed it to the ratchet effect. Photogalvanic effect induced by obliquely incident excitation is also observed. Under near-infrared excitation, however, the normal incident ratchet effect becomes insignificant and the linear photogalvanic effect at oblique incidence dominantly contributes to the electric current.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
72.40.+w Photoconduction and photovoltaic effects
73.63.Nm Quantum wires
78.20.Jq Electro-optical effects
78.56.-a Photoconduction and photovoltaic effects
78.67.Uh Nanowires

Contact resistance in top-gated graphene field-effect transistors

Bo-Chao Huang, Ming Zhang, Yanjie Wang, and Jason Woo

Appl. Phys. Lett. 99, 032107 (2011); http://dx.doi.org/10.1063/1.3614474 (3 pages) | Cited 18 times

Online Publication Date: 22 July 2011

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The parasitic resistance of different source/drain metals for top-gated graphene field-effect transistors was extracted by fitting the measured ID-VG data with a resistance model and was found to be a significant part of the total resistance of graphene field-effect transistors. The results show that Ti/Au gives relatively large contact resistance, about 7500 Ω·μm. Ni/Au contact shows better result compared to Ti/Au, which is around 2100 Ω·μm. The lowest contact resistance was given by Ti/Pd/Au, which is around 750 Ω·μm. The contact resistivity for Ti/Pd/Au source/drain contact is around 2 × 10−6 Ω·cm2, close to state of the art GaAs technology.
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85.30.Tv Field effect devices
85.75.Hh Spin polarized field effect transistors
73.40.Cg Contact resistance, contact potential
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