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Applied Physics Letters / Volume 99 / Issue 4 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 99, 042107 (2011); http://dx.doi.org/10.1063/1.3617461 (3 pages)

The effect of Bi composition to the optical quality of GaAs1−xBix

A. R. Mohmad1,2, F. Bastiman1, C. J. Hunter1, J. S. Ng1, S. J. Sweeney3, and J. P. R. David1

1Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, United Kingdom
2Institute of Microengineering and Nanoelectronics, National University of Malaysia (UKM), 43000 Bangi, Selangor, Malaysia
3Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom

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(Received 21 June 2011; accepted 9 July 2011; published online 28 July 2011)

GaAs1−xBix alloys grown by molecular beam epitaxy for x up to 0.06 were studied by photoluminescence (PL). The results indicate that dilute fractions of bismuth (Bi) with x < 0.025 improve the material quality of this low temperature growth alloys by reducing the density of gallium (Ga) and/or arsenic related defects. The crystal quality starts to degrade at higher Bi concentration probably due to significant amount of Bi-related defects, BiGa. However, the room temperature PL intensity continues to increase with Bi content for the range studied due to greater band-gap offset between GaAs and GaAs1−xBix. Analysis carried out shows no correlation between localization effects and the room temperature PL enhancement.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

doping profiles, gallium arsenide, III-V semiconductors, molecular beam epitaxial growth, photoluminescence, semiconductor epitaxial layers, semiconductor growth

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3617461

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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