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25 Jul 2011

Volume 99, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 99, 041102 (2011); http://dx.doi.org/10.1063/1.3615051 (3 pages)

M. Davanço, M. T. Rakher, D. Schuh, A. Badolato, and K. Srinivasan
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High sensitivity AlGaN/GaN field effect transistor protein sensors operated in the subthreshold regime by a control gate electrode

Xuejin Wen, Samit Gupta, Yuji Wang, Theodore R. Nicholson, III, Stephen C. Lee, and Wu Lu

Appl. Phys. Lett. 99, 043701 (2011); http://dx.doi.org/10.1063/1.3600063 (3 pages) | Cited 3 times

Online Publication Date: 26 July 2011

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We demonstrate high sensitivity AlGaN/GaN field effect transistor biosensors with a control gate electrode for streptavidin detection. The device active area is functionalized with 3-Aminopropyltriethoxysilane and N-hydroxysulfosuccinimide-biotin for streptavidin binding. Without any electrochemical side effects, a gate voltage is applied through a Pt control electrode to the solution so that the device operates sensitively in the subthreshold regime. Due to the logarithmic relationship between the channel current and gate voltage in the subthreshold regime, at a concentration of 4.73 pM streptavidin, the device exhibits 9.97% current change in the subthreshold regime compared with the current in phosphate buffered saline solution. In the linear regime, the current change is 0.49% at the same streptavidin concentration.
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87.80.-y Biophysical techniques (research methods)
87.85.-d Biomedical engineering
81.05.Ea III-V semiconductors
82.45.Vp Semiconductor materials in electrochemistry
85.30.Tv Field effect devices

Power dependent oxygenation state transition of red blood cells in a single beam optical trap

Rui Liu, Lena Zheng, Dennis L. Matthews, Noriko Satake, and James W. Chan

Appl. Phys. Lett. 99, 043702 (2011); http://dx.doi.org/10.1063/1.3617467 (3 pages) | Cited 5 times

Online Publication Date: 29 July 2011

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Laser tweezers Raman spectroscopy (LTRS) was used to demonstrate that a red blood cell (RBC) in a single beam optical trap transitions from an oxygenated to a partially deoxygenated state with increasing trapping power. Continuous switching between the two states is possible by repeatedly cycling between low and high trapping powers. Alterations in the hemoglobin conformation and interactions due to cell folding in the trap are proposed to be responsible for the transition. This study demonstrates that mechanically induced biochemical changes by optical forces need to be considered when applying single beam optical tweezers for cell analysis. LTRS holds promise as a functional assay to characterize normal and diseased RBCs based on their biochemical response to the forces of a single beam optical trap.
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87.50.W- Optical/infrared radiation effects
36.20.Ng Vibrational and rotational structure, infrared and Raman spectra
87.17.-d Cell processes
87.14.E- Proteins
87.15.M- Spectra of biomolecules
87.15.R- Reactions and kinetics

High performance silicon-on-insulator based ion-sensitive field-effect transistor using high-k stacked oxide sensing membrane

Hyun-June Jang and Won-Ju Cho

Appl. Phys. Lett. 99, 043703 (2011); http://dx.doi.org/10.1063/1.3619831 (3 pages) | Cited 4 times

Online Publication Date: 29 July 2011

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High performance ion-sensitive field-effect transistors (ISFETs) were realized using silicon-on insulator substrate (SOI) and engineered sensing membrane. The engineered sensing membrane for the gate oxide was proposed to improve the chemical stability and obtain the enhanced output signal by stacking SiO2/HfO2/Al2O3 (OHA) layers. The SOI-metal–oxide–semiconductor field effect transistor (MOSFET) with the OHA gate oxide showed a high on/off current ratio of 1.8 × 1010 and a low subthreshold swing of 65 mV/dec. The SOI based ISFET with the OHA membrane exhibited a low drift rate of 0.23 mV/h, a low hysteresis width of 1.85 mV, and a high pH sensitivity level of 57.1 mV/pH.
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85.30.Tv Field effect devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
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