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25 Jul 2011

Volume 99, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 99, 041102 (2011); http://dx.doi.org/10.1063/1.3615051 (3 pages)

M. Davanço, M. T. Rakher, D. Schuh, A. Badolato, and K. Srinivasan
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Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density

E. Šermukšnis, J. Liberis, M. Ramonas, A. Matulionis, J. H. Leach, M. Wu, V. Avrutin, and H. Morkoç

Appl. Phys. Lett. 99, 043501 (2011); http://dx.doi.org/10.1063/1.3615284 (3 pages) | Cited 2 times

Online Publication Date: 26 July 2011

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Fluctuation technique is used to measure hot-phonon lifetime in dual channel GaN-based configuration proposed to support high-power operation at high frequencies. The channel is formed of a composite Al0.1Ga0.9N/GaN structure situated in an Al0.82In0.18N/AlN/Al0.1Ga0.9N/GaN heterostructure. According to capacitance–voltage measurements and simultaneous treatment of Schrödinger–Poisson equations, the mobile electrons in this dual channel configuration form a camelback density profile at elevated hot-electron temperatures. The hot-phonon lifetime was found to depend on the shape of the electron profile rather than solely on its sheet density. The camelback channel with an electron sheet density of 1.8 × 1013 cm−2 demonstrates ultrafast decay of hot phonons at hot-electron temperatures above 600 K: the hot-phonon lifetime is below ∼60 fs in contrast to ∼600 fs at an electron sheet density of 1.2 × 1013 cm−2 obtained in a reference Al0.82In0.18N/AlN/GaN structure at 600 K. The results suggest a suitable method to increase the electron sheet density without the deleterious effect caused by inefficient hot-phonon decay observed in a standard design at similar electron densities.
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85.30.Tv Field effect devices
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
72.20.Fr Low-field transport and mobility; piezoresistance
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Investigation on the characteristics of stress-induced hump in amorphous oxide thin film transistors

Jang Hyun Kim, Dae Woong Kwon, Ji Soo Chang, Sang Wan Kim, Jae Chul Park, Chang Jung Kim, and Byung-Gook Park

Appl. Phys. Lett. 99, 043502 (2011); http://dx.doi.org/10.1063/1.3606538 (3 pages) | Cited 3 times

Online Publication Date: 28 July 2011

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In this study, we investigate the instability of amorphous oxide thin film transistors using hafnium-indium-zinc oxide under simultaneous application of light and gate dc-bias. The hump characteristics are observed after negative gate bias and light stress. Based on the positive bias-induced recovery, it is proved that photo-generated holes are trapped in the gate insulator by the electrical field enhanced by the optical energy. Moreover, from simulated electric field distribution, it is clearly revealed that the hole-trapping is localized at the edge regions of the gate insulator along channel width/length directions by electric field crowding, resulting in the hump occurrence.
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85.30.Tv Field effect devices

Transparent, flexible, ultrathin sound source devices using Indium Tin oxide films

He Tian, Dan Xie, Yi Yang, Tian-Ling Ren, Yu-Feng Wang, Chang-Jian Zhou, Ping-Gang Peng, Li-Gang Wang, and Li-Tian Liu

Appl. Phys. Lett. 99, 043503 (2011); http://dx.doi.org/10.1063/1.3617462 (3 pages) | Cited 8 times

Online Publication Date: 28 July 2011

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Thermoacoustic effects were observed in 100-nm indium tin oxide (ITO) films. The sound emission from the ITO films was measured as a function of power, distance, and frequency. Significant flat and wide frequency responses occurred between 20 and 50 kHz. The sound pressure and efficiency were in good agreement with theoretical results. This indicates that a thermoacoustic effect exists in metal-oxide materials and that a large family of transparent electrode materials may exhibit similar properties. Using the ultrathin, transparent, and flexible characteristics, we showed promising applications of ITO sound source devices that were integrated with liquid crystal display screens.
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43.38.-p Transduction; acoustical devices for the generation and reproduction of sound
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Enhanced sensitivity of magnetoelectric sensors by tuning the resonant frequency

Jonathan R. Petrie, Jonathan Fine, Sanjay Mandal, Gollapudi Sreenivasulu, Gopalan Srinivasan, and Alan S. Edelstein

Appl. Phys. Lett. 99, 043504 (2011); http://dx.doi.org/10.1063/1.3617428 (3 pages) | Cited 5 times

Online Publication Date: 29 July 2011

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The sensitivity of magnetoelectric (ME) sensors is more than an order of magnitude higher at their mechanical resonant frequency fr. By applying a restoring torque to an asymmetric ME sensor, we have increased its effective stiffness and, thus, fr by 20% while maintaining the enhanced sensitivity at resonance. The torque was dependent on both the tensile force from a suspended weight and the length of the wire attaching it. This provides two alternative routes for tuning fr to optimize performance. We have detected fields below 10 pT at both the shifted and unshifted fr of 132.2 Hz.
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07.55.-w Magnetic instruments and components

Electrical investigation of the interface band structure in rubrene single-crystal/nickel junction

Yuta Kitamura, Eiji Shikoh, Satria Zulkarnaen Bisri, Taishi Takenobu, and Masashi Shiraishi

Appl. Phys. Lett. 99, 043505 (2011); http://dx.doi.org/10.1063/1.3615704 (3 pages) | Cited 1 time

Online Publication Date: 29 July 2011

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The electronic structure of the interface between rubrene (C42H28) single crystal and ferromagnetic Ni is studied using an electrical method from a viewpoint of spintronics applications of organic single crystals. The Schottky barrier height at the interface is estimated to be 0.56 eV, and our finding is compared with previous results in spectroscopic method. This study clarifies the importance of electrical investigations of the Schottky barriers for various ferromagnet/organic systems and suggests that functionalization and carrier doping to rubrene single crystals are potential for obtaining the thinner barriers and yielding conclusive electrical spin injection.
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73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
72.25.-b Spin polarized transport
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
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