APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

25 Jul 2011

Volume 99, Issue 4, Articles (04xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 041102 (2011); http://dx.doi.org/10.1063/1.3615051 (3 pages)

M. Davanço, M. T. Rakher, D. Schuh, A. Badolato, and K. Srinivasan
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Electric-field-induced volume change and room temperature phase stability of (Bi1/2Na1/2)TiO3-x mol. % BaTiO3 piezoceramics

Wook Jo and Jürgen Rödel

Appl. Phys. Lett. 99, 042901 (2011); http://dx.doi.org/10.1063/1.3615675 (3 pages) | Cited 22 times

Online Publication Date: 25 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Phase stability of (1 − x) (Bi1/2Na1/2)TiO3-x BaTiO3 (0 ≤ x ≤ 0.15) under electric field was investigated by measuring volume changes during a bipolar poling cycle. The unique nature of field-dependent phase stability with three distinctive regions is revealed by comparative studies using commercial soft PZT and relaxor PLZT. For x ≤ 0.06 and x ≥ 0.13, similarly with PZT and PLZT, the axial strain expands with the contracting radial strain, but the former results in a remanent volume demonstrating an electric-field-induced phase transition. For 0.08 ≤ x ≤ 0.12, this field-induced phase transition is distinguished by negligible radial contractions implying polarization rotation. A “poling-induced” morphotropic phase boundary forms at x = 0.07.
Show PACS
77.65.Ly Strain-induced piezoelectric fields

Effect of thermal stresses on the dielectric properties of strontium titanate thin films

J. Zhang, C. V. Weiss, and S. P. Alpay

Appl. Phys. Lett. 99, 042902 (2011); http://dx.doi.org/10.1063/1.3617430 (3 pages) | Cited 4 times

Online Publication Date: 26 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We develop a quantitative thermodynamic model to understand the role of thermal stresses on the dielectric permittivity and tunability of (001)-textured polycrystalline monodomain strontium titanate (SrTiO3) films. This methodology is used to compute the dielectric constant and tunability of SrTiO3 films on Si, c-sapphire, LaAlO3, and MgO substrates. Results show that dielectric properties of SrTiO3 depend strongly on the growth/processing temperature TG. For substrates such as MgO that induce compressive in-plane thermal stresses, the dielectric response of SrTiO3 is enhanced. However, for SrTiO3 films on IC-compatible substrates (Si and c-sapphire), thermal stresses can significantly degrade the dielectric permittivity and tunability.
Show PACS
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Highly textured laser annealed Pb(Zr0.52Ti0.48)O3 thin films

S. S. N. Bharadwaja, F. Griggio, J. Kulik, and S. Trolier-McKinstry

Appl. Phys. Lett. 99, 042903 (2011); http://dx.doi.org/10.1063/1.3615295 (3 pages) | Cited 3 times

Online Publication Date: 26 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
RF sputtered amorphous Pb(Zr0.52Ti0.48)O3 (PZT) films (∼300–350 nm in thickness) on {111}Pt/Ti/SiO2/Si or {001}PbTiO3/Pt/Ti/SiO2/Si substrates were laser crystallized to obtain highly textured {111} and {001} PZT thin films. The measured remanent polarizations and coercive fields were 31 µC/cm2 and 86 kV/cm for {001} films and 24 µC/cm2 and 64 kV/cm for {111} oriented PZT films, respectively. The maximum e31,f piezoelectric charge coefficients are ∼ −11 C/m2 for {001} and ∼ −9 C/m2 for {111} PZT thin films respectively.
Show PACS
77.84.Cg PZT ceramics and other titanates
77.55.fg Pb(Zr,Ti)O3-based films
77.55.hj PZT
77.22.Ej Polarization and depolarization
77.65.Bn Piezoelectric and electrostrictive constants
77.80.-e Ferroelectricity and antiferroelectricity

In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition

M. Milojevic, R. Contreras-Guerrero, E. O’Connor, B. Brennan, P. K. Hurley, J. Kim, C. L. Hinkle, and R. M. Wallace

Appl. Phys. Lett. 99, 042904 (2011); http://dx.doi.org/10.1063/1.3615666 (3 pages) | Cited 2 times

Online Publication Date: 26 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Ga2O interfacial passivation layers (IPLs) on In0.53Ga0.47As are investigated using in-situ monochromatic x-ray photoelectron spectroscopy. The oxide is entirely composed of Ga2O when deposited with an effusion cell temperature of 1500 °C and substrate temperature of 425 °C. The growth on In0.53Ga0.47As reveals slight chemical modification of the surface. The Ga2O behavior and ability to protect the III-V surface are observed following Al2O3 deposition by atomic layer deposition following each precursor pulse. Al2O3 growth by trimethyl-Al (TMA) and water reveals that the IPL undergoes the “clean-up” effect following TMA exposures causing As-As bonding formation resulting in a high interface state density.
Show PACS
81.65.Rv Passivation
79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.60.-i Photoemission and photoelectron spectra

Role of polymer matrix in large enhancement of dielectric constant in polymer-metal composites

Maheswar Panda, V. Srinivas, and A. K. Thakur

Appl. Phys. Lett. 99, 042905 (2011); http://dx.doi.org/10.1063/1.3600345 (3 pages) | Cited 1 time

Online Publication Date: 26 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Dielectric behavior of polymer (polar/nonpolar)-metal nanocomposites (PMCs) prepared under identical processing conditions have been compared. A high effective dielectric constant (ɛeff>2500) with a moderate loss and a lower ɛeff (74) with low loss was observed, respectively, for polar and nonpolar PMC at their respective percolation thresholds (fc). The results have been explained with the help of percolation theory and dipolar polarization. Similar value of fc observed in both the PMC is attributed to the same order of conductivity of polymer matrices. The dipolar polarization present in the polymer plays a major role in the enhancement of ɛeff.
Show PACS
77.22.Ej Polarization and depolarization
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
77.22.Gm Dielectric loss and relaxation
64.60.ah Percolation

Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum

M. Tallarida, C. Adelmann, A. Delabie, S. Van Elshocht, M. Caymax, and D. Schmeisser

Appl. Phys. Lett. 99, 042906 (2011); http://dx.doi.org/10.1063/1.3615784 (3 pages) | Cited 5 times

Online Publication Date: 27 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The removal of the native oxides from NH4OH-cleaned p-GaAs (100) by exposure to trimethyl-aluminum (TMA) was studied by in situ photoelectron spectroscopy using synchrotron radiation. The reduction of high-valence As- and Ga-oxides occurred through different routes: while As3+ was reduced to As(1±Δ)+ suboxides (with 0 ≤ Δ ≤ 1), Ga3+ was directly removed. The surface Fermi level was shifted by about 100 meV towards the valence band edge upon TMA exposure. This indicates that removing the native oxide of GaAs by TMA is insufficient to create interfaces between GaAs and Al2O3 with defects densities below the 1012 cm−2 range.
Show PACS
71.20.Nr Semiconductor compounds
79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.20.At Surface states, band structure, electron density of states
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
71.55.Eq III-V semiconductors

Biferroic relaxors

Ashok Kumar, J. F. Scott, and R. S. Katiyar

Appl. Phys. Lett. 99, 042907 (2011); http://dx.doi.org/10.1063/1.3610556 (3 pages) | Cited 2 times

Online Publication Date: 28 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Epitaxial biferroic relaxors of formula Pb[(Zr0.53Ti0.47)0.4(Fe0.67W0.33)0.6]O3 (PZTFW) were grown by pulsed laser deposition (PLD) techniques. Raman spectra revealed a global Fm3m symmetry with two high-frequency A1g modes that imply the existence of polar nano-regions (PNRs). Near room temperature, frequency-dependent dielectric patterns follow Vogel-Fulcher (VF) relation that implies relaxor ferroelectric phase, however, a frequency-dependent, high-temperature, Maxwell-Wagner space charge-based phase transition was also noticed. A large and irreversible magnetization with a sharp cusp in zero-field-cooled (ZFC) magnetization with low ZFC magnetic field advocates Heisenberg spin-glass behavior. Observation of slim ferroelectric hysteresis below the freezing temperature (Tf), PNRs, and spin glass confirms biferroic-relaxor nature.
Show PACS
77.80.Dj Domain structure; hysteresis
78.30.Hv Other nonmetallic inorganics
77.80.Jk Relaxor ferroelectrics
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
81.15.Fg Pulsed laser ablation deposition

Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

L. K. Chu, C. Merckling, A. Alian, J. Dekoster, J. Kwo, M. Hong, M. Caymax, and M. Heyns

Appl. Phys. Lett. 99, 042908 (2011); http://dx.doi.org/10.1063/1.3617436 (3 pages) | Cited 5 times

Online Publication Date: 28 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigated the passivation of In0.53Ga0.47As (001) surface by molecular beam epitaxy techniques. After growth of strained In0.53Ga0.47As on InP (001) substrate, HfO2/Al2O3 high-κ oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (Dit) of the Al2O3/In0.53Ga0.47As interface have been revealed by conductance measurement, indicating a downward Dit profile from the energy close to the valence band (medium 1012 cm−2eV−1) towards that close to the conduction band (1011 cm−2eV−1). The low Dit’s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO2 has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO2 thickness (dielectric constant of HfO2 ∼20) and the remained low Dit’s due to the thin Al2O3 passivation layer. The sample with HfO2 (3.4 nm)/Al2O3 (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of ∼0.93 nm.
Show PACS
85.30.Tv Field effect devices
68.55.A- Nucleation and growth
73.20.-r Electron states at surfaces and interfaces
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.Rv Passivation
82.45.Bb Corrosion and passivation

Local atomic and electronic structures and ferroelectric properties of PbZr0.52Ti0.48O3: An x-ray absorption study

S. C. Ray, H. C. Hsueh, C. H. Wu, C. W. Pao, K. Asokan, M. T. Liu, H. M. Tsai, C. H. Chuang, W. F. Pong, J. W. Chiou, M.-H. Tsai, J. M. Lee, L. Y. Jang, J. M. Chen, and J. F. Lee

Appl. Phys. Lett. 99, 042909 (2011); http://dx.doi.org/10.1063/1.3607475 (3 pages) | Cited 2 times

Online Publication Date: 29 July 2011

Full Text: Read Online (HTML) | Download PDF


See Also: Publisher's Note

Show Abstract
This work investigates local atomic and electronic structures of PbZr0.52Ti0.48O3 (PZT) thin films with <001>, <101>, and <111> orientations using extended x-ray absorption fine structure (EXAFS) and x-ray absorption near-edge structure (XANES) spectroscopy with θ = 0° and 70° incident angles. The EXAFS result indicates that the <001>-oriented PZT film has a polarization dominantly along the c-axis, while both <101>- and <111>-oriented PZT films have a dominant in-ab-plane polarization. The hysteresis-loop measurements show that the <001>-oriented PZT film has a much larger coercive field than those of other two PZT films, which indicates that the double-well potential along the c-axis is much deeper than that in the ab-plane.
Show PACS
77.55.fg Pb(Zr,Ti)O3-based films
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
78.70.Dm X-ray absorption spectra
77.84.Cg PZT ceramics and other titanates
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close