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1 Aug 2011

Volume 99, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 99, 051112 (2011); http://dx.doi.org/10.1063/1.3617421 (3 pages)

Wei Li, Jun Chen, Gerard Nouet, Liang-yao Chen, and Xunya Jiang
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High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman’s method revised

David A. Deen and James G. Champlain

Appl. Phys. Lett. 99, 053501 (2011); http://dx.doi.org/10.1063/1.3615279 (3 pages)

Online Publication Date: 1 August 2011

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In a multi-layer heterojunction system, the interface responsible for trap charging is spatially displaced from the two-dimensional charge gas, in contrast to the typical SiO2/Si capacitor. This displacement causes the effective trap capacitance to occur in a different configuration than that of the SiO2/Si system that Terman originally considered. The adaptation of Terman’s high frequency capacitance-voltage method for interface trap density extraction is developed for the heterojunction multi-layer capacitor.
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84.32.Tt Capacitors

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

L. Goux, K. Opsomer, R. Degraeve, R. Müller, C. Detavernier, D. J. Wouters, M. Jurczak, L. Altimime, and J. A. Kittl

Appl. Phys. Lett. 99, 053502 (2011); http://dx.doi.org/10.1063/1.3621835 (3 pages) | Cited 7 times

Online Publication Date: 1 August 2011

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In this letter, we explore the influence of the CuxTe1-x layer composition (0.2 < x < 0.8) on the resistive switching of CuxTe1−x/Al2O3/Si cells. While x > 0.7 leads to large reset power, similar to pure-Cu electrodes, x < 0.3 results in volatile forming properties. The intermediate range 0.5 < x < 0.7 shows optimum memory properties, featuring improved control of filament programming using <5 μA as well as state stability at 85 °C. The composition-dependent programming control and filament stability are closely associated with the phases in the CuxTe1−x layer and are explained as related to the chemical affinity between Cu and Te.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.30.Sk Pulse and digital circuits

Downscaling effects on self-heating related instabilities in p-channel polycrystalline silicon thin film transistors

A. Valletta, P. Gaucci, L. Mariucci, A. Pecora, L. Maiolo, and G. Fortunato

Appl. Phys. Lett. 99, 053503 (2011); http://dx.doi.org/10.1063/1.3621874 (3 pages) | Cited 1 time

Online Publication Date: 3 August 2011

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Downscaling of polycrystalline silicon (polysilicon) thin film transistors (TFTs) is currently pursued to improve device speed, and in the present work we analyze the effects of downscaling on the self-heating related instability. Experimental results show improved stability of scaled polysilicon TFTs operating at same power densities. To explain this effect we performed three-dimensional thermo-electric numerical simulations, indicating that channel temperature reduction occurs in the scaled devices due to enhanced lateral thermal dissipation. Therefore, the present results show that downscaling not only provides higher speed devices but also a route for reducing self-heating related instability in polysilicon TFTs.
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85.30.Tv Field effect devices

On inhibiting Auger intraband relaxation in InAs/GaAs quantum dot intermediate band solar cells

Stanko Tomić, Antonio Martí, Elisa Antolín, and Antonio Luque

Appl. Phys. Lett. 99, 053504 (2011); http://dx.doi.org/10.1063/1.3621876 (3 pages) | Cited 3 times

Online Publication Date: 5 August 2011

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The operation of ideal quantum dot intermediate band solar cell requires the largest possible reduction of carrier relaxation from the conduction band to the intermediate band (intraband relaxation) so that it approaches the radiative limit. In this respect, we examine the contribution to this relaxation of Auger related electron cooling non-radiative mechanisms and suggest ways of suppressing them.
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88.40.jm Thin film III-V and II-VI based solar cells

Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

Kenji Nomura, Toshio Kamiya, and Hideo Hosono

Appl. Phys. Lett. 99, 053505 (2011); http://dx.doi.org/10.1063/1.3622121 (3 pages) | Cited 11 times

Online Publication Date: 5 August 2011

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Highly stable amorphous-In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) against constant current stress and negative bias light illumination stress were realized by forming a Y2O3 passivation layer. A recent photoemission study revealed that deep defects located above the valence band top are formed at a high density to a depth of ∼2 nm in the surface layer of the a-IGZO channel. Here, we present that these deep defects are responsible for the instability of a-IGZO TFTs, and the instability can be much improved by passivation with Y2O3, which effectively eliminates the deep subgap defects from the surface of a-IGZO.
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85.30.Tv Field effect devices
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