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1 Aug 2011

Volume 99, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 051112 (2011); http://dx.doi.org/10.1063/1.3617421 (3 pages)

Wei Li, Jun Chen, Gerard Nouet, Liang-yao Chen, and Xunya Jiang
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Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals

Mandar J. Gadre and T. L. Alford

Appl. Phys. Lett. 99, 051901 (2011); http://dx.doi.org/10.1063/1.3619196 (3 pages) | Cited 3 times

Online Publication Date: 1 August 2011

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Amorphous indium gallium zinc oxide (a-IGZO) thin films of the highest transmittance reported in literature were initially deposited onto flexible polymer substrates at room temperature. The films were annealed in vacuum, air, and oxygen to enhance their electrical and optical performances. Electrical and optical characterizations were done before and after anneals. A partial reversal of the degradation in electrical properties upon annealing in oxygen was achieved by subjecting the films to subsequent vacuum anneals. A model was developed based on film texture and structural defects which showed close agreement between the measured and calculated carrier mobility values at low carrier concentrations (2–6 × 1019 cm−3).
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73.61.Jc Amorphous semiconductors; glasses
78.66.Hf II-VI semiconductors
78.66.Jg Amorphous semiconductors; glasses
81.15.Cd Deposition by sputtering
72.20.Fr Low-field transport and mobility; piezoresistance
73.61.Ga II-VI semiconductors

Collateral evidence for an excellent radiative performance of AlxGa1−xN alloy films of high AlN mole fractions

S. F. Chichibu, K. Hazu, T. Onuma, and A. Uedono

Appl. Phys. Lett. 99, 051902 (2011); http://dx.doi.org/10.1063/1.3615681 (3 pages) | Cited 4 times

Online Publication Date: 1 August 2011

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Recombination dynamics for the deep-ultraviolet (DUV) near-band-edge emission of AlxGa1−xN epilayers of high AlN mole fractions (x) are studied using time-resolved spectroscopy. Their low-temperature radiative lifetime (τR) is longer than that for the epilayers of low-x AlxGa1−xN, AlN, or GaN due to the contribution of bound and localized tail-states. However, τR shows little change with temperature rise, and the value is a few ns at 300 K. The results essentially indicate an excellent radiative performance of AlxGa1−xN alloys of high x, although the luminescence efficiency of AlxGa1−xN DUV light-emitting-diodes reported so far is limited by the short nonradiative lifetime.
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78.66.Fd III-V semiconductors
78.47.jd Time resolved luminescence
78.60.Hk Cathodoluminescence, ionoluminescence
78.55.Cr III-V semiconductors
78.70.Bj Positron annihilation

Photo-induced lattice softening of excited-state VO2

Masaki Hada, Kunio Okimura, and Jiro Matsuo

Appl. Phys. Lett. 99, 051903 (2011); http://dx.doi.org/10.1063/1.3621900 (3 pages) | Cited 7 times

Online Publication Date: 1 August 2011

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In this letter, we demonstrated the photoexcitation of metallic phase vanadium dioxide (VO2) with time-resolved x-ray diffraction measurements. Through the photoexcitation, the metallic phase VO2 transitioned to the similar transient state, which was presented in the insulator to metal phase transition in the time-scale of ∼10 ps. This transient state was accessed only by the photoexcitation and not through further thermal excitation. The presence of the transient state could be an important factor in any further application of the phase transition phenomena.
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72.60.+g Mixed conductivity and conductivity transitions
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
64.70.K- Solid-solid transitions

Highly conductive and transparent alumina-doped ZnO films processed by direct pulsed laser recrystallization at room temperature

Martin Y. Zhang and Gary J. Cheng

Appl. Phys. Lett. 99, 051904 (2011); http://dx.doi.org/10.1063/1.3622645 (3 pages) | Cited 7 times

Online Publication Date: 2 August 2011

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Highly conductive and transparent alumina-doped ZnO (AZO) thin films (250 nm) are deposited at room temperature using pulsed laser deposition (PLD) and direct pulsed laser recrystallization (DPLR). Morphological characterizations show that the AZO films undergo recrystallization and growth during DPLR, which leads to less internal imperfections in AZO films and hence better film conductance. Electrical-optical characterizations show that DPLR results in significant improvement in conductivity, Hall mobility, and transmission from UV to NIR regions. Decrease in carrier concentration density in AZO film is observed. Compared with PLD, DPLR processed AZO films also possess smaller band gap which leads to broader solar spectrum acceptance.
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68.55.ag Semiconductors
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Dz II-VI semiconductors
81.15.Fg Pulsed laser ablation deposition
61.72.uj III-V and II-VI semiconductors

Stress changed damping and associated transforming behavior in a Ti48.5Ni51.5 strain glass

Yu Wang, Xiaoping Song, Xiangdong Ding, Sen Yang, Jian Zhang, Xiaobing Ren, and Kazuhiro Otsuka

Appl. Phys. Lett. 99, 051905 (2011); http://dx.doi.org/10.1063/1.3619830 (3 pages) | Cited 2 times

Online Publication Date: 2 August 2011

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We report a changeable damping behavior by stress for Ti48.5Ni51.5 strain glass. This phenomenon originates from the change of its transforming route upon increasing stress. Under low stress, the damping behavior of Ti48.5Ni51.5 strain glass is due to the strain glass transition; however, the damping behavior under intermediate stress stems from a strain glass transition and a subsequent martensitic transition. More interestingly, under high stress, the damping behavior is caused by the martensitic transition. With a phenomenological model, the stress dependent transforming behavior of strain glass can be explained consistently.
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61.43.Fs Glasses
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.05.Kf Glasses (including metallic glasses)
81.30.Kf Martensitic transformations
64.70.kj Glasses
64.70.pe Metallic glasses

Photoinduced mass-transport based holographic recording of surface relief gratings in amorphous selenium films

M. L. Trunov, P. M. Lytvyn, S. N. Yannopoulos, I. A. Szabo, and S. Kökényesi

Appl. Phys. Lett. 99, 051906 (2011); http://dx.doi.org/10.1063/1.3614432 (3 pages) | Cited 3 times

Online Publication Date: 2 August 2011

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Surface relief gratings formation in amorphous selenium thin films in two recording configurations with light intensity modulation were studied in situ by real-time atomic force microscopy and diffraction efficiency measurements. We report observation of mass transport effect in films induced by band-gap irradiation when the light polarization of the recording beams has a component along the light intensity gradient (“p-p” scheme of recording) that allows obtaining giant stable gratings in this versatile chalcogenide material. On the contrary, only a pure scalar weak grating caused by photoinduced volume shrinkage is obtained in the “s-s” recording configuration, even for long-term irradiation.
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42.79.Wc Optical coatings
78.66.Jg Amorphous semiconductors; glasses
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
42.40.Ht Hologram recording and readout methods
42.40.My Applications
42.79.Dj Gratings

High frequency elastic losses in LaAlO3 and its importance for LaAlO3/SrTiO3 heterojunctions

Ekhard K. H. Salje and Michael A. Carpenter

Appl. Phys. Lett. 99, 051907 (2011); http://dx.doi.org/10.1063/1.3622305 (3 pages) | Cited 6 times

Online Publication Date: 2 August 2011

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Cooling heterojunctions on LaAlO3 substrates or thick layers of LaAlO3 on SrTiO3 substrates below 820 K lead to a ferroelastic phase transition Pmmathm→ Rmathc in LaAlO3, with extensive twinning and elastic softening. Twin boundaries add to structural disorder near the heterojunction and generate partially localized carriers. Resonant Ultrasound Spectroscopy data relating to the elastic instability in LaAlO3 show that elastic Cole-Cole circles and the background autocorrelation function follow Vogel-Fulcher behaviour, with a Vogel-Fulcher temperature of 230 K. An extremely low activation energy, 0.02 eV, would promote the formation of highly structured, “glassy” LaAlO3 near the junction.
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81.40.Jj Elasticity and anelasticity, stress-strain relations
81.70.Cv Nondestructive testing: ultrasonic testing, photoacoustic testing
62.20.dq Other elastic constants
64.70.K- Solid-solid transitions
61.72.Mm Grain and twin boundaries

Acoustic guiding and subwavelength imaging with sharp bending by sonic crystal

Bo Li, Ke Deng, and Heping Zhao

Appl. Phys. Lett. 99, 051908 (2011); http://dx.doi.org/10.1063/1.3622652 (3 pages) | Cited 2 times

Online Publication Date: 3 August 2011

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A sharp bending scheme for the self-collimation of acoustic waves is proposed by simply truncating the sonic crystals. An all-angle and wide-band 90°-bending wave guide is demonstrated with nearly perfect transmissions for Gaussian beams at a wide range of incident angles. A 90°-bended imaging for a point source with a subwavelength resolution of 0.37 λ0 is also realized by the proposed structure. These results will find applicability in the manipulation of acoustic waves by sonic crystals.
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42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
43.20.-f General linear acoustics
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Ag Apertures, collimators

Mo- and N-doped BiNbO4 for photocatalysis applications

J. Nisar, B. C. Wang, B. Pathak, T. W. Kang, and R. Ahuja

Appl. Phys. Lett. 99, 051909 (2011); http://dx.doi.org/10.1063/1.3622659 (3 pages) | Cited 12 times

Online Publication Date: 3 August 2011

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The electronic structure of pure BiNbO4 has been calculated and their electronic band positions have been aligned with respect to the water oxidation/reduction potential. The effect of cationic (Mo), anionic (N), and co-doping (Mo-N) on BiNbO4 has been studied and discussed with respect to the standard redox potential levels. Our results show that co-doping of Mo and N in BiNbO4 reduces the band gap up to 31.8%, thus making it a potential candidate for the photocatalysis of water for hydrogen production. The relative stability between the mono- and co-doped BiNbO4 materials show that co-doped material is more stable and feasible in comparison to the mono-doped materials.
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71.20.Ps Other inorganic compounds
61.72.up Other materials

73 mm-diameter bulk metallic glass rod by copper mould casting

H. B. Lou, X. D. Wang, F. Xu, S. Q. Ding, Q. P. Cao, K. Hono, and J. Z. Jiang

Appl. Phys. Lett. 99, 051910 (2011); http://dx.doi.org/10.1063/1.3621862 (3 pages) | Cited 6 times

Online Publication Date: 3 August 2011

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To be structural materials, the critical size is always a bottleneck of bulk metallic glasses (BMGs) due to the cooling rate restriction. Here, we report a developed alloy of Zr46Cu30.14Ag8.36Al8Be7.5, which can be cast into amorphous rods in 73 mm diameter by copper mould casting. The strong glass forming ability of this alloy is closely related to the Be addition, which not only suppresses the phase separation happening in the as-cast Be-free BMG but also sustains low Gibbs free energy difference for crystallization. This finding will stimulate more interests in developing BMGs and their industrial applications.
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81.05.Kf Glasses (including metallic glasses)
64.70.kj Glasses
64.70.pe Metallic glasses
61.43.Fs Glasses
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.

Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor

F. Panciera, K. Hoummada, M. Gregoire, M. Juhel, N. Bicais, and D. Mangelinck

Appl. Phys. Lett. 99, 051911 (2011); http://dx.doi.org/10.1063/1.3616150 (3 pages) | Cited 9 times

Online Publication Date: 3 August 2011

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Atom probe tomography was used to study the redistribution of platinum and arsenic atoms after Ni(Pt) silicidation of As-doped polycrystalline Si. These measurements were performed on a field-effect transistor and compared with those obtained in unpatterned region submitted to the same process. These results suggest that Pt and As redistribution during silicide formation is only marginally influenced by the confinement in microelectronic devices. On the contrary, there is a clear difference with the redistribution reported in the literature for the blanket wafers. Selective etching used to remove the non-reacted Ni(Pt) film after the first rapid heat treatment may induce this difference.
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85.30.Tv Field effect devices

Response of graphene to femtosecond high-intensity laser irradiation

Adam Roberts, Daniel Cormode, Collin Reynolds, Ty Newhouse-Illige, Brian J. LeRoy, and Arvinder S. Sandhu

Appl. Phys. Lett. 99, 051912 (2011); http://dx.doi.org/10.1063/1.3623760 (3 pages) | Cited 13 times

Online Publication Date: 4 August 2011

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We study the response of graphene to high-intensity, 50-femtosecond laser pulse excitation. We establish that graphene has a high (∼3 × 1012 Wcm−2) single-shot damage threshold. Above this threshold, a single laser pulse cleanly ablates graphene, leaving microscopically defined edges. Below this threshold, we observe laser-induced defect formation leading to degradation of the lattice over multiple exposures. We identify the lattice modification processes through in-situ Raman microscopy. The effective lifetime of chemical vapor deposition grown graphene under femtosecond near-infrared irradiation and its dependence on laser intensity is determined. These results also define the limits of non-linear applications of graphene in femtosecond high-intensity regime.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.30.Am Elemental semiconductors and insulators
78.47.J- Ultrafast spectroscopy (<1 psec)
78.67.Wj Optical properties of graphene

Femtosecond ultrasonic spectroscopy using a piezoelectric nanolayer: Hypersound attenuation in vitreous silica films

Yu-Chieh Wen, Shi-Hao Guol, Hung-Pin Chen, Jinn-Kong Sheu, and Chi-Kuang Sun

Appl. Phys. Lett. 99, 051913 (2011); http://dx.doi.org/10.1063/1.3620879 (3 pages) | Cited 2 times

Online Publication Date: 4 August 2011

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We report ultra-broadband ultrasonic spectroscopy with an impedance-matched piezoelectric nanolayer, which enables optical generation and detection of a 730-fs acoustic pulse (the width of ten lattice constants). The bandwidth improvement facilitates THz laser ultrasonics to bridge the spectral gap between inelastic light and x-ray scatterings (0.1-1 THz) in the studies of lattice dynamics. As a demonstration, this method is applied to measure sound attenuation α in a vitreous SiO2 thin film. Our results extend the existing low-frequency data obtained by ultrasonic-based and light scattering methods and also show a α∝ f2 behavior for frequencies f up to 650 GHz.
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62.65.+k Acoustical properties of solids
68.60.Bs Mechanical and acoustical properties
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.70.Ck X-ray scattering
78.47.je Time resolved light scattering spectroscopy

Conducted growth of SrRuO3 nanodot arrays on self-ordered La0.18Sr0.82Al0.59Ta0.41O3(001) surfaces

R. Bachelet, C. Ocal, L. Garzón, J. Fontcuberta, and F. Sánchez

Appl. Phys. Lett. 99, 051914 (2011); http://dx.doi.org/10.1063/1.3622140 (3 pages) | Cited 2 times

Online Publication Date: 4 August 2011

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We show that the surface of (001)-oriented La0.18Sr0.82Al0.59Ta0.41O3 (LSAT) single-crystalline substrates can be self-ordered as to become a laterally long-range ordered pattern of nanometric stripes of distinct composition. Atomically flat and periodically modulated, the resulting surface exhibits concomitant interface energy variations with an upper growing epilayer. By exploiting combined selective growth and epitaxial strain, these nanostructured substrates are used as templates to promote the self-formation of one-dimensional arrays of SrRuO3 dots.
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81.07.Bc Nanocrystalline materials
81.16.Dn Self-assembly
68.55.A- Nucleation and growth
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Surface acoustic wave response to ambient humidity in graphite oxide structures

R. Rimeika, J. Barkauskas, and D. Čiplys

Appl. Phys. Lett. 99, 051915 (2011); http://dx.doi.org/10.1063/1.3624476 (3 pages)

Online Publication Date: 5 August 2011

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The effect of ambient air humidity on surface acoustic waves (SAW) in graphite oxide-lithium niobate structures was investigated. The acoustic wave amplitude and phase strongly depended on the humidity level in structures with graphite oxide films deposited on the free substrate surface. These dependencies were significantly reduced in structures with graphite oxide films deposited on a metalized substrate surface. Fast (sub-second range) response in the acoustic amplitude and phase to step-like humidity changes was observed. Humidity-induced variations in the SAW amplitude and velocity are attributed to acoustoelectric interaction and mass loading due to moisture adsorption by graphite oxide layers.
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68.35.Iv Acoustical properties
68.43.Mn Adsorption kinetics
68.60.Bs Mechanical and acoustical properties
72.50.+b Acoustoelectric effects
73.50.Rb Acoustoelectric and magnetoacoustic effects
62.65.+k Acoustical properties of solids

Strong Faraday rotation in Ce and Bi comodified epitaxial iron garnet films: Valence control through strain engineering

Jae-Yeol Hwang, Roberto Morandotti, and Alain Pignolet

Appl. Phys. Lett. 99, 051916 (2011); http://dx.doi.org/10.1063/1.3621838 (3 pages) | Cited 3 times

Online Publication Date: 5 August 2011

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The correlation between lattice-misfit strain and the valence change of cerium was investigated in cerium and bismuth comodified iron garnet epitaxial films. We demonstrated that the transition of the valence state from Ce4+ to Ce3+ is triggered by reducing the compressive lattice-misfit strain and that the increase in concentration of Ce3+ induces a red-shift of the optical bandgap as well as an enhancement of the Faraday rotation. An extraordinary Faraday rotation of 0.91 deg/μm at 1.55 μm was achieved in these films by maximizing the concentration of Ce3+ through strain engineering.
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78.20.Ls Magneto-optical effects
78.66.Nk Insulators
71.20.Ps Other inorganic compounds
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Interface thermal resistance and thermal rectification in hybrid graphene-graphane nanoribbons: A nonequilibrium molecular dynamics study

A. Rajabpour, S. M. Vaez Allaei, and F. Kowsary

Appl. Phys. Lett. 99, 051917 (2011); http://dx.doi.org/10.1063/1.3622480 (3 pages) | Cited 13 times

Online Publication Date: 5 August 2011

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The thermal conductivity of hybrid graphene-graphane nanoribbons (GGNRs) have been investigated using nonequilibrium molecular dynamics simulations. The interface between graphene and graphane leads to a Kapitza resistance with strongly dependence on the imposed heat flux direction. We introduce GGNRs as promising thermal rectifiers at room temperature. By calculating phonon spectra, underlying mechanisms were investigated.
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73.40.Ei Rectification
31.15.xv Molecular dynamics and other numerical methods
66.70.Df Metals, alloys, and semiconductors
63.22.Rc Phonons in graphene
68.35.Ct Interface structure and roughness
68.35.Ja Surface and interface dynamics and vibrations
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