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8 Aug 2011

Volume 99, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 063701 (2011); http://dx.doi.org/10.1063/1.3622631 (3 pages)

Bomi Gweon, Mina Kim, Dan Bee Kim, Daeyeon Kim, Hyeonyu Kim, Heesoo Jung, Jennifer H. Shin, and Wonho Choe
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The role of electric field polarization of the incident laser beam in the short pulse damage mechanism of pulse compression gratings

Steve Hocquet, Jerome Neauport, and Nicolas Bonod

Appl. Phys. Lett. 99, 061101 (2011); http://dx.doi.org/10.1063/1.3624832 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2011

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We investigate the short pulse laser induced damage initiation mechanism on multilayer dielectric pulse compression gratings. We report that damages initiate at the edge of the grating pillars opposite to the incoming wave. It demonstrates, at a nanometer scale, the role of the electric field in the damage process coupled with periodic ripple pattern developing along the polarization direction. We avoid the formation of ripples by illuminating the diffraction grating in TM polarization and measure a significantly improved laser induced damage threshold associated with a strong decrease of the electric field in the grating structure.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Dj Gratings

Optical touch screen based on waveguide sensing

Henrik C. Pedersen, Michael L. Jakobsen, Steen G. Hanson, Morten Mosgaard, Theis Iversen, and Jorgen Korsgaard

Appl. Phys. Lett. 99, 061102 (2011); http://dx.doi.org/10.1063/1.3615656 (3 pages) | Cited 1 time

Online Publication Date: 9 August 2011

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We disclose a simple, optical touch screen technique based on a planar injection molded polymer waveguide, a single laser, and a small linear detector array. The solution significantly reduces the complexity and cost as compared to existing optical touch technologies. Force detection of a touching finger is also demonstrated.
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85.60.Pg Display systems
42.79.Kr Display devices, liquid-crystal devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
42.82.Et Waveguides, couplers, and arrays
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy

Exciton-plasmon-photon conversion in silver nanowire: Polarization dependence

Lu-Lu Wang, Chang-Ling Zou, Xi-Feng Ren, Ai-Ping Liu, Liu Lv, Yong-Jing Cai, Fang-Wen Sun, Guang-Can Guo, and Guo-Ping Guo

Appl. Phys. Lett. 99, 061103 (2011); http://dx.doi.org/10.1063/1.3625949 (3 pages) | Cited 6 times

Online Publication Date: 9 August 2011

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Polarization dependence of the exciton-plasmon-photon conversion in silver nanowire-quantum dots structure was investigated using a scanning confocal microscope system. We found that the fluorescence enhancement of the CdSe nanocrystals was correlated with the angle between the excitation light polarization and the silver nanowire direction. The polarization of the emission was also related with the nanowire direction. It was in majority in the direction parallel with nanowire due to the nano-antenna effect.
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71.35.-y Excitons and related phenomena
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
78.55.Hx Other solid inorganic materials
78.67.Hc Quantum dots
78.67.Uh Nanowires

Negative differential gain due to many body effects in self-assembled quantum dot lasers

H. Shahid, D. T. D. Childs, B. J. Stevens, and R. A. Hogg

Appl. Phys. Lett. 99, 061104 (2011); http://dx.doi.org/10.1063/1.3624708 (3 pages) | Cited 2 times

Online Publication Date: 10 August 2011

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The gain spectrum of a quantum dot laser operating at 1300 nm is studied at high carrier densities, corresponding to dot occupancies of ∼8 e-h pairs per quantum dot. A reduction in peak gain with increasing carrier density is observed, attributed to the saturation of peak gain, yet the continuous increase in dephasing acting to broaden the individual quantum dot transitions.
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42.55.Px Semiconductor lasers; laser diodes

Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

F. Tan, R. Bambery, M. Feng, and N. Holonyak, , Jr.

Appl. Phys. Lett. 99, 061105 (2011); http://dx.doi.org/10.1063/1.3622110 (3 pages) | Cited 3 times

Online Publication Date: 10 August 2011

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A single quantum well transistor laser (cavity length L = 300 μm) has been designed and fabricated that operates with threshold ITH = 18 mA at 15 °C and 14 mA at 0 °C. Due to the “fast” base recombination lifetime (τB < 29 ps), the transistor laser demonstrates reduced photon-carrier resonance amplitude (<4 dB) over its entire bias range and a modulation bandwidth f-3dB = 9.8 GHz at 15 °C for IB/ITH = 3.3 and 17 GHz at 0 °C for IB/ITH = 6.4. Under the same bias conditions, simultaneous electrical and optical “open-eye” signal operations are demonstrated at 20 and 40 Gb/s data rate modulation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Direct observation of surface plasmon far field for regular surface ripple formation by femtosecond laser pulse irradiation of gold nanostructures on silicon substrates

Go Obara, Yuto Tanaka, Nikolay N. Nedyalkov, Mitsuhiro Terakawa, and Minoru Obara

Appl. Phys. Lett. 99, 061106 (2011); http://dx.doi.org/10.1063/1.3624925 (3 pages) | Cited 3 times

Online Publication Date: 11 August 2011

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We have directly observed the interference ripple pattern between surface plasmon far field by gold nanosphere and the incident laser on silicon substrate. We explained the ripple formation using three-dimensional finite-difference time-domain simulation method. Nanosphere is an origin for regular ripple formation due to Mie scattering. We present a new method to control the plasmonic far-field pattern using an arbitrary gold nanostructure on the silicon substrate. Previously, the formed ripples were not regular but wavy because they were formed incoherently through the self organization process originating from the random surface roughness. The ripple structure was well controlled coherently.
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81.16.Rf Micro- and nanoscale pattern formation
02.70.Bf Finite-difference methods
68.35.bg Semiconductors
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.47.J- Ultrafast spectroscopy (<1 psec)

On-a-chip surface plasmon tweezers

H. M. K. Wong, M. Righini, J. C. Gates, P. G. R. Smith, V. Pruneri, and R. Quidant

Appl. Phys. Lett. 99, 061107 (2011); http://dx.doi.org/10.1063/1.3625936 (3 pages) | Cited 8 times

Online Publication Date: 11 August 2011

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We report on an integrated optical trapping platform operated by simple fiber coupling. The system consists of a dielectric channel optical waveguide decorated with an array of gold micro-pads. Through a suitable engineering of the waveguide mode, we achieve light coupling to the surface plasmon resonance of the gold pads that act as individual plasmonic traps. We demonstrate parallel trapping of both micrometer size polystyrene beads and yeast cells at predetermined locations on the chip with only 20 mW total incident laser power.
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42.82.Et Waveguides, couplers, and arrays
42.50.Wk Mechanical effects of light on material media, microstructures and particles

Organic conjugated material-based broadband terahertz wave modulators

Hyung Keun Yoo, Chul Kang, Youngwoon Yoon, Hanju Lee, Joong Wook Lee, Kiejin Lee, and Chul-Sik Kee

Appl. Phys. Lett. 99, 061108 (2011); http://dx.doi.org/10.1063/1.3626591 (3 pages) | Cited 1 time

Online Publication Date: 12 August 2011

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A simple and efficient broadband terahertz (THz) wave modulator based on an organic conjugated material thin film, 200-nm thick organic copper phthalocyanine (CuPc) film, deposited on a Si wafer was proposed. External laser beams significantly decrease the transmittance of THz pulses through the CuPc film over all frequency of the pulse. Modulation efficiency reaches as high as 55% under a cw-laser beam of 80 mW.
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78.70.Gq Microwave and radio-frequency interactions
78.66.Li Other semiconductors
81.05.Fb Organic semiconductors

Photosensitivity at 1550 nm and Bragg grating inscription in As2Se3 chalcogenide microwires

Raja Ahmad and Martin Rochette

Appl. Phys. Lett. 99, 061109 (2011); http://dx.doi.org/10.1063/1.3625942 (3 pages) | Cited 7 times

Online Publication Date: 12 August 2011

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We present the experimental observation of photosensitivity in As2Se3 glass at a wavelength of 1550 nm. We utilize this photosensitivity to induce the Bragg gratings using a laser source at a wavelength of 1550 nm. We also quantify the photosensitivity thresholds related to exposition intensity and exposition time. Further, we demonstrate that As2Se3 microwire Bragg gratings are widely tunable in wavelength as the microwire can withstand an applied longitudinal strain of 2.7 × 104 μɛ.
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42.79.Dj Gratings
42.70.Ce Glasses, quartz
42.70.Gi Light-sensitive materials

Enhancement in emission efficiency of diamond deep-ultraviolet light emitting diode

Toshiharu Makino, Kiyoshi Yoshino, Norihiro Sakai, Kouji Uchida, Satoshi Koizumi, Hiromitsu Kato, Daisuke Takeuchi, Masahiko Ogura, Kazuhiro Oyama, Tsubasa Matsumoto, Hideyo Okushi, and Satoshi Yamasaki

Appl. Phys. Lett. 99, 061110 (2011); http://dx.doi.org/10.1063/1.3625943 (3 pages) | Cited 7 times

Online Publication Date: 12 August 2011

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We demonstrate high-efficiency excitonic emission with deep-ultraviolet (DUV) light of 235 nm at room temperature for a (111)-oriented diamond p-i-n junction light-emitting diode (LED) by introducing a thick i-layer. Significant enhancement in excitonic emission efficiency of over 500 times was observed for a diamond LED by increasing the i-layer thickness from 0.1 to 14 μm. Maximum output power and external quantum efficiency of excitonic emission for the LED without any specific device structure were 0.1 mW and 0.006%, respectively, under pulsed-current injection. We also demonstrate the sterilization of Escherichia coli by irradiation with DUV light from the diamond LED.
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85.60.Jb Light-emitting devices
87.85.-d Biomedical engineering
85.60.Dw Photodiodes; phototransistors; photoresistors
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