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8 Aug 2011

Volume 99, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 99, 063701 (2011); http://dx.doi.org/10.1063/1.3622631 (3 pages)

Bomi Gweon, Mina Kim, Dan Bee Kim, Daeyeon Kim, Hyeonyu Kim, Heesoo Jung, Jennifer H. Shin, and Wonho Choe
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Shape dependence of slip length on patterned hydrophobic surfaces

Xiaokun Gu and Min Chen

Appl. Phys. Lett. 99, 063101 (2011); http://dx.doi.org/10.1063/1.3622640 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2011

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The effects of solid-liquid interfacial shape on the boundary velocity slip of patterned hydrophobic surfaces are investigated. The scaling law in literature is extended to demonstrate the role of such shape, indicating a decrease of the effective slip length with increasing interfacial roughness. A patterned surface with horizontally aligned carbon nanotube arrays reaches an effective slip length of 83 nm, by utilizing large intrinsic slippage of carbon nanotube while keeping away from the negative effects of interfacial curvature through the flow direction. The results emphasize the importance of avoiding the solid-liquid interfacial roughness in low-friction patterned surface design and manufacture.
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47.45.Gx Slip flows and accommodation
61.43.Bn Structural modeling: serial-addition models, computer simulation
68.08.Bc Wetting
68.35.Md Surface thermodynamics, surface energies
61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems

Tolerance study of nanoparticle enhancement for thin-film silicon solar cells

Yu. A. Akimov and W. S. Koh

Appl. Phys. Lett. 99, 063102 (2011); http://dx.doi.org/10.1063/1.3623483 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2011

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The improved light trapping caused by incorporation of plasmonic nanoparticles makes it possible to significantly increase the performance of thin-film silicon solar cells. To investigate stability of this enhancement, a systematic study on random distribution of the nanoparticles is performed. Based on predictive numerical modeling, effects such as the influence of random nanoparticle sizes, shapes, and mutual positions are discussed and analyzed with respect to reproducibility of the enhancement by silver nanoparticles for thin-film hydrogenated amorphous silicon solar cells.
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88.40.jj Silicon solar cells
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
88.40.hj Efficiency and performance of solar cells

Functionalization of cubic boron nitride films with rhodamine B and their fluorescent properties

W. M. Liu, H. Y. Zhang, P. F. Wang, Q. Ye, Y. Yang, B. He, I. Bello, S. T. Lee, and W. J. Zhang

Appl. Phys. Lett. 99, 063103 (2011); http://dx.doi.org/10.1063/1.3619837 (3 pages)

Online Publication Date: 8 August 2011

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Fluorophore-functionalized cubic boron nitride (cBN) films grown by chemical vapor deposition were achieved by immobilizing rhodamine B isothiocyanate onto their surfaces. To perform the immobilization, the cBN substrates were modified with amino groups by photochemical reaction between hydrogen-terminated cBN surfaces and allylamine. The surface analysis of hydrogen-terminated cBN films surfaces and after functionalization with x-ray photoelectron spectroscopy verified that rhodamine B was indeed attached to the cBN surfaces with covalent bonding. The rhodamine B-functionalized cBN surfaces showed significant variation in fluorescent spectra and confocal imaging upon the treatment in acidic or basic solutions.
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78.66.Fd III-V semiconductors
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.05.Ea III-V semiconductors
81.65.-b Surface treatments
82.50.Hp Processes caused by visible and UV light
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Enhanced field emission from clustered TiO2 nanotube arrays

Yahya Alivov, Michael Klopfer, and Sabee Molloi

Appl. Phys. Lett. 99, 063104 (2011); http://dx.doi.org/10.1063/1.3616138 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2011

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Field emission properties of clustered titanium dioxide (TiO2) nanotube arrays have been studied and compared with those of dense, highly aligned TiO2 nanotube arrays. It was found that clustered nanotube arrays showed significant increase of field emission current density (sevenfold) and field enhancement factor (fivefold) compared to regular shape, highly aligned forest-like TiO2 nanotube arrays, which can be explained by the reduction of electric field screening effects. Clustered TiO2 nanotubes arrays were achieved by electrochemical oxidation of titanium sheet in electrolyte consisting of diethylene or ethylene glycol solvents and ammonium fluorine, while the well aligned nanotube arrays were grown using glycerol.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.65.Mq Oxidation
61.46.Fg Nanotubes
82.80.Fk Electrochemical methods
82.45.Rr Electroanalytical chemistry
82.45.Yz Nanostructured materials in electrochemistry

Tuning electronic transport of ZnO micro/nanowires by a transverse electric field

Qi Zhang, Junjie Qi, Yunhua Huang, Xin Li, and Yue Zhang

Appl. Phys. Lett. 99, 063105 (2011); http://dx.doi.org/10.1063/1.3616141 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2011

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Electronic transport of individual ZnO micro/nanowires was tuned by applying a transverse electric field, and the diameter effect on carrier mobility in that process was measured. Surface charges induced by the external field modulate longitudinal electronic transport in wires and a minimum conductivity was obtained in the negative electric field. Electron mobility deduced from conductivity versus surface-charge was in agreement with the value obtained from the current-voltage characteristics. Moreover, electron mobility of the wire decreases as its diameter increases in a constant transverse electric field, which was not observed without the transverse electric field. We also discuss the possible mechanisms.
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73.63.Nm Quantum wires
72.20.Fr Low-field transport and mobility; piezoresistance
81.07.Gf Nanowires

Concentration dependence of drift and magnetoresistance ballistic mobility in a scaled-down metal-oxide semiconductor field-effect transistor

Vijay K. Arora, Mastura Shafinaz Zainal Abidin, Saurabh Tembhurne, and Munawar A. Riyadi

Appl. Phys. Lett. 99, 063106 (2011); http://dx.doi.org/10.1063/1.3621885 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2011

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The degradation of ballistic mobility in a metal-oxide semiconductor field-effect transistor is attributed to the nonstationary ballistic injection from the contacts as the length of a channel shrinks to the length smaller than the scattering-limited mean free path. Apparent contradiction between the rise of magnetoresistance mobility and fall of drift mobility with increasing channel concentration is attributed to scattering-dependent magnetoresistance factor. The ballistic mean free path of injected carriers is found to be substantially higher than the long-channel drift mean free path. Excellent agreement with the experimental data on length-limited ballistic mobility is obtained.
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85.30.Tv Field effect devices
72.20.Ht High-field and nonlinear effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.My Galvanomagnetic and other magnetotransport effects
73.23.Ad Ballistic transport
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Nanowires improved charge separation and light utilization in metal-oxide solar cells

Wei-Yun Cheng, Yi-Feng Lin, and Shih-Yuan Lu

Appl. Phys. Lett. 99, 063107 (2011); http://dx.doi.org/10.1063/1.3622309 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2011

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The power conversion efficiencies of electrodeposited Cu2O/ZnO p-n junction based solar cells are significantly improved by sandwiching a layer of spin-coated CdS nanowires (NWs) in between the electrochemically deposited Cu2O and ZnO layers. With the inclusion of the CdS NWs, there is observed a 5 fold improvement in the conversion efficiency, from 0.12% to 0.6%, as compared with that of the plain Cu2O/ZnO cell. The improvement is attributed to the enlarged p-n interface area and enhanced light harvesting, charge separation, and electron transport made possible by incorporating the single crystalline, relatively low band gap CdS NWs.
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88.40.jp Multijunction solar cells
88.40.hj Efficiency and performance of solar cells

Hybrid spintronics and straintronics: A magnetic technology for ultra low energy computing and signal processing

Kuntal Roy, Supriyo Bandyopadhyay, and Jayasimha Atulasimha

Appl. Phys. Lett. 99, 063108 (2011); http://dx.doi.org/10.1063/1.3624900 (3 pages) | Cited 14 times

Online Publication Date: 9 August 2011

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The authors show that the magnetization of a 2-phase magnetostrictive/piezoelectric multiferroic single-domain shape-anisotropic nanomagnet can be switched with very small voltages that generate strain in the magnetostrictive layer. This can be the basis of ultralow power computing and signal processing. With appropriate material choice, the energy dissipated per switching event can be reduced to ∼45 kT at room temperature for a switching delay of ∼100 ns and ∼70 kT for a switching delay of ∼10 ns, if the energy barrier separating the two stable magnetization directions is ∼32 kT. Such devices can be powered by harvesting energy exclusively from the environment without the need for a battery.
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85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

M. G. Borselli, K. Eng, E. T. Croke, B. M. Maune, B. Huang, R. S. Ross, A. A. Kiselev, P. W. Deelman, I. Alvarado-Rodriguez, A. E. Schmitz, M. Sokolich, K. S. Holabird, T. M. Hazard, M. F. Gyure, and A. T. Hunter

Appl. Phys. Lett. 99, 063109 (2011); http://dx.doi.org/10.1063/1.3623479 (3 pages) | Cited 15 times

Online Publication Date: 9 August 2011

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We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.
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81.07.Ta Quantum dots
72.20.-i Conductivity phenomena in semiconductors and insulators
72.80.Cw Elemental semiconductors
73.63.Kv Quantum dots

Thermal resistance of a nanoscale point contact to an indium arsenide nanowire

Feng Zhou, Ann Persson, Lars Samuelson, Heiner Linke, and Li Shi

Appl. Phys. Lett. 99, 063110 (2011); http://dx.doi.org/10.1063/1.3623758 (3 pages) | Cited 2 times

Online Publication Date: 10 August 2011

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The thermal resistance of a nanoscale point contact to an indium arsenide nanowire was experimentally determined to be two orders of magnitude larger than the theoretical prediction based on the diffuse mismatch model for a welded contact. The discrepancy is attributed mainly to a much smaller phonon transmission coefficient for the weak van der Waals contact than for a welded contact. The experiment further suggests the need of careful examination of the structure and defects in the nanowire sample for similar thermal transport measurements of individual nanowires.
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81.05.Ea III-V semiconductors
63.22.Gh Nanotubes and nanowires
66.70.Df Metals, alloys, and semiconductors
81.07.Gf Nanowires

Concurrent spinodal decomposition and surface roughening in thin solid films

A. Boyne, S. A. Dregia, and Y. Wang

Appl. Phys. Lett. 99, 063111 (2011); http://dx.doi.org/10.1063/1.3624532 (3 pages) | Cited 2 times

Online Publication Date: 10 August 2011

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A computational model based on the phase field method is developed to investigate the morphological evolution of a thin solid film undergoing concurrent spinodal decomposition and surface roughening. It is found that there is a strong link between developing two-phase microstructures, surface roughness, and film break-up. A non-traditional film-to-island morphological transition is observed due to the presence of coherency stress in the film caused by phase separation.
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64.75.St Phase separation and segregation in thin films
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.J- Morphology of films
68.60.Wm Other nonelectronic physical properties
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
64.70.K- Solid-solid transitions

White light emission from CdTe quantum dots decorated n-ZnO nanorods/p-GaN light-emitting diodes

J. Dai, Y. Ji, C. X. Xu, X. W. Sun, K. S. Leck, and Z. G. Ju

Appl. Phys. Lett. 99, 063112 (2011); http://dx.doi.org/10.1063/1.3625948 (3 pages) | Cited 2 times

Online Publication Date: 11 August 2011

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ZnO-based heterostructured light-emitting diode was fabricated by hydrothermally growing ZnO nanorods on p-type GaN substrate. Blue-violet electroluminescence was observed from the ZnO/GaN diode. The color-tunable CdTe quantum dots (QDs) samples with photoluminescence emission peaks ranging from 550 nm to 660 nm were synthesized. We fabricated two hybrid light-emitting diodes by decorating different CdTe QDs on the ZnO nanorods/GaN diodes, the white light emission was effectively observed from such devices.
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85.60.Jb Light-emitting devices

Self-assembly of metallic double-dot single-electron device

A. Guttman, D. Mahalu, J. Sperling, E. Cohen-Hoshen, and I. Bar-Joseph

Appl. Phys. Lett. 99, 063113 (2011); http://dx.doi.org/10.1063/1.3624899 (3 pages)

Online Publication Date: 12 August 2011

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We present an approach that allows forming a nanometric double dot single electron device. It uses chemical synthesis of metallic nanoparticles to form dimeric structures, e-beam lithography to define electrodes and gates, and electrostatic trapping to place the dimers in between the electrodes. We demonstrate a control of its charge configuration and conductance properties over a wide range of external voltages. This approach can be straightforwardly generalized to other material systems and may allow realizing quantum information devices.
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85.35.Gv Single electron devices

Optical properties of boron nitride nanoribbons: Excitonic effects

Shudong Wang, Qian Chen, and Jinlan Wang

Appl. Phys. Lett. 99, 063114 (2011); http://dx.doi.org/10.1063/1.3625922 (3 pages) | Cited 6 times

Online Publication Date: 12 August 2011

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The optical properties of zigzag and armchair boron nitride nanoribbons (BNNRs) are investigated via a GW-Bethe-Salpeter equation approach. The reduced dimensionality and large band gaps of the BNNRs significantly enhance the exciton binding energies up to several eV. Many-body effects dramatically reshape the absorption spectra and excitonic peaks dominate the spectra. Moreover, the absorption spectra of zigzag BNNRs distinctly differ from those of armchair BNNRs, which can be as a signature to distinguish these two kinds of BNNRs experimentally. Dark excitons, stemming from dipole-forbidden transition, are also observed in BNNRs, which might greatly influence the luminescence yield of the system.
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81.07.Bc Nanocrystalline materials
71.20.Nr Semiconductor compounds
73.22.Lp Collective excitations
78.55.Cr III-V semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.05.Ea III-V semiconductors

Electrically pumped near-ultraviolet lasing from ZnO/MgO core/shell nanowires

C. Y. Liu, H. Y. Xu, J. G. Ma, X. H. Li, X. T. Zhang, Y. C. Liu, and R. Mu

Appl. Phys. Lett. 99, 063115 (2011); http://dx.doi.org/10.1063/1.3625925 (3 pages) | Cited 10 times

Online Publication Date: 12 August 2011

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Electrically pumped near-ultraviolet lasing was achieved in a metal/insulator/semiconductor laser diode based on ZnO/MgO core/shell nanowires. The nanowire diode shows higher emission intensity at relatively low operating current density compared with the planar device. The improved efficiency is attributed to enhanced exciton oscillator strength and superior carrier transport properties of single-crystalline ZnO nanowires, and effective surface passivation by MgO coating. Random laser action was confirmed by the calculation of quality factor and the real-time changes of lasing spectra. The results reveal that the MgO coating serves as electron blocking, hole supplying and surface passivation layer for the nanowire heterostructure.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Wc Optical coatings
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