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15 Aug 2011

Volume 99, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 073701 (2011); http://dx.doi.org/10.1063/1.3599706 (3 pages)

Miguel A. Santiago-Cordoba, Svetlana V. Boriskina, Frank Vollmer, and Melik C. Demirel
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One-dimensional photonic crystal nanobeam lasers on a flexible substrate

Tsan-Wen Lu, Li-Hsun Chiu, Pin-Tso Lin, and Po-Tsung Lee

Appl. Phys. Lett. 99, 071101 (2011); http://dx.doi.org/10.1063/1.3626592 (3 pages) | Cited 3 times

Online Publication Date: 15 August 2011

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We demonstrate a one-dimensional (1D) photonic crystal (PhC) nanocavity laser composed of hybrid PhC mirrors on a suspended nanobeam (NB) with very small device footprint of 8.5 × 0.57 μm2. The 0th-order mode lasing action with low threshold of 280 μW is observed. Via the optical glue stamping process, the devices are directly transferred onto a flexible polypropylene substrate. Single mode lasing action with effective threshold of 17 μW is achieved. The robust lasing properties of the device with different bending radii R from ∞ to 2.5 mm are obtained. Via finite-element method, we also theoretically address that the lasing wavelength is almost invariant when R > 1.0 mm. This flexible 1D PhC NB laser will be a good candidate for efficient nanolaser in future flexible photonic integrated circuits with ultrahigh component density.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.70.Qs Photonic bandgap materials
42.79.Bh Lenses, prisms and mirrors
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
02.70.Dh Finite-element and Galerkin methods

Generation of high power tunable multicycle teraherz pulses

Zhao Chen, Xibin Zhou, Christopher A. Werley, and Keith A. Nelson

Appl. Phys. Lett. 99, 071102 (2011); http://dx.doi.org/10.1063/1.3624919 (3 pages) | Cited 10 times

Online Publication Date: 15 August 2011

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We demonstrate generation of high-power, multicycle, and frequency-tunable terahertz pulses with microjoule energies by tilting the intensity front of a quasi-sinusoidal intensity-modulated optical waveform. The spatiotemporally shaped waveform undergoes difference-frequency mixing in lithium niobate, generating a THz phonon-polariton wave whose electromagnetic component is coupled out to free space. The narrowband THz spectrum is tunable between 0.3–1.3 THz, with adjustable bandwidths generally less than 0.1 THz. At 10 Hz and 1 kHz repetition rates, 10 μJ and 1 μJ THz pulse energies are achieved, respectively, over a broad frequency range.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Inverse polarizing effect of subwavelength metallic gratings in deep ultraviolet band

Guo G. Kang, Ismo Vartiainen, Ben F. Bai, Hemmo Tuovinen, and Jari Turunen

Appl. Phys. Lett. 99, 071103 (2011); http://dx.doi.org/10.1063/1.3624534 (3 pages) | Cited 3 times

Online Publication Date: 15 August 2011

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Using subwavelength structures to manipulate the polarization of deep ultraviolet light is generally known as difficult with the current nano-fabrication technologies. An aluminum grating with period close to the incident wavelength is designed and experimentally evidenced to exhibit a pronounced inverse polarizing effect in the deep ultraviolet band. By using the Fourier modal method and planar waveguide theory, we show that the main contributor to the inverse polarizing effect is the excitation of surface plasmons on the front surface of the grating.
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42.79.Dj Gratings
42.82.Et Waveguides, couplers, and arrays
73.22.Lp Collective excitations
78.66.Bz Metals and metallic alloys

Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells

Carl J. Neufeld, Samantha C. Cruz, Robert M. Farrell, Michael Iza, Stacia Keller, Shuji Nakamura, Steven P. DenBaars, James S. Speck, and Umesh K. Mishra

Appl. Phys. Lett. 99, 071104 (2011); http://dx.doi.org/10.1063/1.3624850 (3 pages) | Cited 4 times

Online Publication Date: 16 August 2011

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We report on the unique thermal properties of In0.28Ga0.72N/GaN multiple quantum well solar cells. The devices exhibited an external quantum efficiency of 69% (26%) at 390 nm (460 nm), an open circuit voltage of 2.04 V, a fill factor of 63%, a short circuit current density of 2 mA/cm2, and a peak output power of 2.63 mW/cm2 at room temperature under 1-sun AM1.5G illumination. Thermal measurements showed that the peak output power increased with temperature up to 2.73 mW/cm2 at 70 °C, signifying the potential of III-nitride solar cells for concentrator photovoltaic applications.
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88.40.H- Solar cells (photovoltaics)

Nanobeam photonic crystal cavity light-emitting diodes

Gary Shambat, Bryan Ellis, Jan Petykiewicz, Marie A. Mayer, Tomas Sarmiento, James Harris, Eugene E. Haller, and Jelena Vučković

Appl. Phys. Lett. 99, 071105 (2011); http://dx.doi.org/10.1063/1.3625432 (3 pages) | Cited 3 times

Online Publication Date: 16 August 2011

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We present results on electrically driven nanobeam photonic crystal cavities formed out of a lateral p-i-n junction in gallium arsenide. Despite their small conducting dimensions, nanobeams have robust electrical properties with high current densities possible at low drive powers. Much like their two-dimensional counterparts, the nanobeam cavities exhibit bright electroluminescence at room temperature from embedded 1250 nm InAs quantum dots. A small room temperature differential gain is observed in the cavities with minor beam self-heating suggesting that lasing is possible. These results open the door for efficient electrical control of active nanobeam cavities for diverse nanophotonic applications.
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85.60.Jb Light-emitting devices
42.55.Tv Photonic crystal lasers and coherent effects

Bulk and surface electromagnetic response of metallic metamaterials to convection electrons

Jin-Kyu So, Kyu-Ha Jang, Gun-Sik Park, and F. J. Garcia-Vidal

Appl. Phys. Lett. 99, 071106 (2011); http://dx.doi.org/10.1063/1.3625952 (3 pages)

Online Publication Date: 16 August 2011

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The electromagnetic response of three-dimensional metallic metamaterials with isotropic effective index of refraction to fast-moving electrons is studied by numerical simulations. The considered metamaterials can support Cerenkov radiation [P. A. Cherenkov, Dokl. Akad. Nauk SSSR 2, 451 (1934)], and their effective dielectric behavior is confirmed by the detailed angular dependence of the generated radiation cone on the kinetic energy of electrons. Moreover, in addition to the predicted bulk modes, surface electromagnetic excitation is observed in a specific type of metamaterials and its dispersion is sensitive to the thickness of the subwavelength rods.
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42.70.-a Optical materials

Strong terahertz radiation by beating of spatial-triangular lasers in a plasma

Anil K. Malik, Hitendra K. Malik, and Ulrich Stroth

Appl. Phys. Lett. 99, 071107 (2011); http://dx.doi.org/10.1063/1.3626845 (3 pages) | Cited 3 times

Online Publication Date: 17 August 2011

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Resonant excitation of terahertz (THz) radiation by beating of two spatial-triangular laser beams having different frequencies and wave numbers but the same electric fields is proposed, where the ponderomotive force in the transverse direction is realized due to the beating and spatial variation of the lasers’ fields. This gives rise to a stronger transient transverse current due to a sharp gradient in the laser field, and subsequently THz radiation is excited resonantly in the presence of a periodic density structure. The present scheme yields the THz field ∼105 kV/cm and the efficiency ∼10−2 for the laser intensity ∼1014 W/cm2.
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52.38.-r Laser-plasma interactions
52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)

Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells

G. Tabares, A. Hierro, B. Vinter, and J.-M. Chauveau

Appl. Phys. Lett. 99, 071108 (2011); http://dx.doi.org/10.1063/1.3624924 (3 pages) | Cited 4 times

Online Publication Date: 17 August 2011

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Light polarization-sensitive UV photodetectors (PSPDs) using non-polar a-plane ZnMgO/ZnO multiple quantum wells grown both on sapphire and ZnO substrates have been demonstrated. For the PSPDs grown on sapphire with anisotropic biaxial in-plain strain, the responsivity absorption edge shifts by ΔE ∼ 21 meV between light polarized perpendicular (⊥) and parallel (||) to the c-axis, and the maximum responsivity (R) contrast is (R⊥/R||)max ∼ 6. For the PSPDs grown on ZnO, with strain-free quantum wells, ΔE ∼ 40 meV and (R⊥/R||)max ∼ 5. These light polarization sensitivities have been explained in terms of the excitonic transitions between the conduction and the three valence bands.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Kk Junction diodes
85.60.Gz Photodetectors (including infrared and CCD detectors)

Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

S. Liebich, M. Zimprich, A. Beyer, C. Lange, D. J. Franzbach, S. Chatterjee, N. Hossain, S. J. Sweeney, K. Volz, B. Kunert, and W. Stolz

Appl. Phys. Lett. 99, 071109 (2011); http://dx.doi.org/10.1063/1.3624927 (3 pages) | Cited 23 times

Online Publication Date: 17 August 2011

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The lattice-matched growth of the direct band gap material Ga(NAsP) is a seminal concept for the monolithic integration of III/V laser on a silicon substrate. Here, we report on the growth, characterization, and lasing properties of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures embedded in (BGa)P cladding layers which were deposited on an exactly oriented (001) Si substrate. Structural investigations confirm a high crystal quality without any indication for misfit or threading dislocation formation. Laser operation between 800 nm and 900 nm of these broad area device structures was achieved under optical pumping as well as electrical injection for temperatures up to 150 K. This “proof of principle” points to the enormous potential of Ga(NAsP) as an optical complement to Si microelectronics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers

Konstanze Hild, Igor P. Marko, S. R. Johnson, S.-Q. Yu, Y.-H. Zhang, and Stephen J. Sweeney

Appl. Phys. Lett. 99, 071110 (2011); http://dx.doi.org/10.1063/1.3625938 (3 pages) | Cited 3 times

Online Publication Date: 17 August 2011

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In this letter, we measure the pure spontaneous emission and lasing emission from a working vertical cavity surface emitting laser (VCSEL) for a wide range of temperatures. From this spontaneous emission, we gain insight into the temperature dependence of the radiative component of the threshold current (and hence gain). Together with the temperature dependence of the threshold current, the cavity mode to gain peak alignment and the temperature dependence of an equivalent active region edge emitting laser, we show how non-radiative recombination coupled with gain-cavity de-tuning influences the thermal properties of these devices.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Structural and optical characterization of type-II InAs/InAs1−xSbx superlattices grown by metalorganic chemical vapor deposition

E. H. Steenbergen, Y. Huang, J.-H. Ryou, L. Ouyang, J.-J. Li, D. J. Smith, R. D. Dupuis, and Y.-H. Zhang

Appl. Phys. Lett. 99, 071111 (2011); http://dx.doi.org/10.1063/1.3625429 (3 pages) | Cited 5 times

Online Publication Date: 18 August 2011

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Strain-balanced type-II InAs/InAs1–xSbx superlattices with various compositions (x = 0.22, 0.23, 0.37) and different layer thicknesses (tInAs = 7 nm, tInAsSb = 3.3, 2.3, 2.0 nm, respectively) have been grown by metalorganic chemical vapor deposition on GaSb substrates. X-ray diffraction revealed narrow satellite peaks (full-width-half-maximum of <100 arc sec), indicative of uniform superlattice periodicity and excellent crystallinity, which was also corroborated by cross-sectional transmission electron microscopy observations. Despite relaxation, low-temperature photoluminescence measurements showed peaks at 6.7 μm and 5.8 μm, while photoconductance results showed strong spectral response up to 200 K, when the photoresponse onset was 8.6 μm.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.Cd Superlattices
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
81.05.Ea III-V semiconductors

Tunable high-energy soliton pulse generation from a large-mode-area fiber and its application to third harmonic generation microscopy

Ke Wang and Chris Xu

Appl. Phys. Lett. 99, 071112 (2011); http://dx.doi.org/10.1063/1.3628337 (3 pages) | Cited 2 times

Online Publication Date: 19 August 2011

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We demonstrate high-energy soliton generation from 1580 nm to 2130 nm by using soliton self-frequency shift in a large-mode-area fiber, pumped by a femtosecond fiber laser source. Transformed-limited soliton pulses with 70 fs pulse width and up to 45 nJ pulse energy are obtained. The broad wavelength tuning range and the high soliton pulse energy, together with the robust fiber-based excitation source, offer unprecedented performance, flexibility, and practicality. To demonstrate the application of the soliton pulses, we image the myelin in mouse brain using third harmonic generation microscopy.
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42.65.Tg Optical solitons; nonlinear guided waves
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Wd Fiber lasers
87.64.M- Optical microscopy
87.63.L- Visual imaging

Non-invasive terahertz field imaging inside parallel plate waveguides

K. Iwaszczuk, A. Andryieuski, A. Lavrinenko, X.-C. Zhang, and P. U. Jepsen

Appl. Phys. Lett. 99, 071113 (2011); http://dx.doi.org/10.1063/1.3628340 (3 pages) | Cited 5 times

Online Publication Date: 19 August 2011

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We present a non-invasive broadband air photonic method of imaging of the electric field of THz pulses propagating inside a tapered parallel plate waveguide. The method is based on field-enhanced second harmonic generation of the fundamental laser beam in an external electric field. We apply the technique to measure the frequency-dependent reflection coefficient at the end of the waveguide.
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42.79.Gn Optical waveguides and couplers
84.40.Az Waveguides, transmission lines, striplines
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
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Direct measurement of the impulse in a magnetic thrust chamber system for laser fusion rocket

Akihiro Maeno, Naoji Yamamoto, Hideki Nakashima, Shinsuke Fujioka, Tomoyuki Johzaki, Yoshitaka Mori, and Atsushi Sunahara

Appl. Phys. Lett. 99, 071501 (2011); http://dx.doi.org/10.1063/1.3626600 (3 pages)

Online Publication Date: 15 August 2011

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An experiment is conducted to measure an impulse for demonstrating a magnetic thrust chamber system for laser fusion rocket. The impulse is produced by the interaction between plasma and magnetic field. In the experiment, the system consists of plasma and neodymium permanent magnets. The plasma is created by a single-beam laser aiming at a polystyrene spherical target. The impulse is 1.5 to 2.2 μNs by means of a pendulum thrust stand, when the laser energy is 0.7 J. Without magnetic field, the measured impulse is found to be zero. These results indicate that the system for generating impulse is working.
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42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Acceleration of a solid-density plasma projectile to ultrahigh velocities by a short-pulse ultraviolet laser

J. Badziak and S. Jabłoński

Appl. Phys. Lett. 99, 071502 (2011); http://dx.doi.org/10.1063/1.3628243 (3 pages) | Cited 4 times

Online Publication Date: 19 August 2011

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It is shown by means of particle-in-cell simulations that a high-fluence (≥1 GJ/cm2) solid-density plasma projectile can be accelerated up to sub-relativistic velocities by radiation pressure of an ultraviolet (UV) picosecond laser pulse of moderate values of dimensionless laser amplitude a0 ∼ 10. The efficiency of acceleration by the UV laser is significantly higher than in the case of long-wavelength (λ ∼ 1 μm) driver of a comparable value of a0, and the motion of the projectile is fairly well described by the “Light Sail” acceleration model.
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52.38.Kd Laser-plasma acceleration of electrons and ions
52.25.Fi Transport properties
52.27.Ny Relativistic plasmas
52.65.Rr Particle-in-cell method
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Influence of tetragonal distortion on the topological electronic structure of the half-Heusler compound LaPtBi from first principles

X. M. Zhang, W. H. Wang, E. K. Liu, G. D. Liu, Z. Y. Liu, and G. H. Wu

Appl. Phys. Lett. 99, 071901 (2011); http://dx.doi.org/10.1063/1.3625946 (3 pages) | Cited 4 times

Online Publication Date: 15 August 2011

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The electronic structures of tetragonally distorted half-Heusler compound LaPtBi in the C1b structure are investigated in the framework of density functional theory using the full potential linearized augmented plane with local spin density approximation method. The calculation results show that both the band structures and the Fermi level can be tuned by using either compressive or tensile in-plane strain. A large bulk band gap of 0.3 eV can be induced through the application of a compressive in-pane strain in LaPtBi with the assumption of a relaxed volume of the unit cell. Our results could serve as a guidance to realize topological insulators in half-Heusler compounds by strain engineering.
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71.20.Gj Other metals and alloys
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Effect of free-carrier concentration on the phase transition and vibrational properties of VO2

M. Nazari, Changhong Chen, A. A. Bernussi, Z. Y. Fan, and M. Holtz

Appl. Phys. Lett. 99, 071902 (2011); http://dx.doi.org/10.1063/1.3626032 (3 pages) | Cited 3 times

Online Publication Date: 16 August 2011

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The effects of native defect doping concentration on the phase transition properties of vanadium dioxide thin films are investigated. The onset temperature of the metal-insulator transition is found to depend on the free-carrier concentration and to correlate with an abrupt change in the temperature dependence of the vibrational energies of the V-O related Raman band. A phase diagram is proposed identifying insulating, intermediate, and conducting regimes. The intermediate region is attributed to a mixed phase.
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71.30.+h Metal-insulator transitions and other electronic transitions
72.60.+g Mixed conductivity and conductivity transitions
73.61.Le Other inorganic semiconductors
78.30.Hv Other nonmetallic inorganics
78.66.Li Other semiconductors
81.30.Bx Phase diagrams of metals, alloys, and oxides
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Unipolar memristors enable “stateful” logic operations via material implication

Xianwen Sun, Guoqiang Li, Linghong Ding, Na Yang, and Weifeng Zhang

Appl. Phys. Lett. 99, 072101 (2011); http://dx.doi.org/10.1063/1.3624895 (3 pages)

Online Publication Date: 15 August 2011

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The realization of material implication (IMP) in a simple circuit combining two bipolar memristors with a conventional resistor was reported and published on Nature recently. The key to IMP is the memristors which are used as digital switches and perform “stateful” logic operations. Here we report that the IMP circuit composed of the unipolar memristors of Au/SrTiO3/Pt devices, which have large switching ratio (over 1000) and linear I-V correlation in low-resistance states, enables logic operations. In the IMP circuit, a small modulation factor of 1.2 is obtained. These results indicate that the robustness of IMP operation is effectively increased.
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84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
84.30.Sk Pulse and digital circuits

Contribution of carriers in both the metallic and semiconducting phase to the transport properties in the Sr-Co-O-C system

Tsuyoshi Takami, Kazushige Tsuchihashi, and Ryoko Kawano

Appl. Phys. Lett. 99, 072102 (2011); http://dx.doi.org/10.1063/1.3624901 (3 pages)

Online Publication Date: 15 August 2011

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We report the synthesis of the Sr-Co-O-C single crystal and its transport and magnetic properties. In contrast to the typical metallic or semiconducting conductivity, the in-plane electrical resistivity below 80 K is almost independent of temperature. Taking the data derived from several experimental probes into consideration, this peculiar behavior is attributable to the coexistence of the metallic and semiconducting phase probably caused by the spin-state crossover below 150 K, rather than a zero gap by the massless Dirac particles; carriers in both the phases are associated with the electrical conduction.
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72.80.Jc Other crystalline inorganic semiconductors
75.30.Cr Saturation moments and magnetic susceptibilities

Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx

V. V. Afanas'ev, M. Houssa, A. Stesmans, C. Merckling, T. Schram, and J. A. Kittl

Appl. Phys. Lett. 99, 072103 (2011); http://dx.doi.org/10.1063/1.3623439 (3 pages) | Cited 7 times

Online Publication Date: 15 August 2011

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Experiments on internal photoemission of electrons from Si and TiNx into thin Al2O3 layers suggest that crystallization of amorphous Al2O3 to the cubic γ-Al2O3 is accompanied by only a ≈ 0.5 eV upshift of the conduction band bottom edge. As it is known that in transforming from the amorphous to the γ-phase, the bandgap of Al2O3 increases from 6.2 eV to 8.7 eV, more than 80% of this gap widening must occur at the VB side of the gap. The latter suggests that interaction between electron states of O anions plays the dominant role in the oxide gap widening.
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64.70.K- Solid-solid transitions
68.37.Xy Scanning Auger microscopy, photoelectron microscopy
71.20.Ps Other inorganic compounds
73.20.At Surface states, band structure, electron density of states
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder

Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory

R. C. Jeff, Jr., M. Yun, B. Ramalingam, B. Lee, V. Misra, G. Triplett, and S. Gangopadhyay

Appl. Phys. Lett. 99, 072104 (2011); http://dx.doi.org/10.1063/1.3625426 (3 pages) | Cited 10 times

Online Publication Date: 15 August 2011

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Charge storage characteristics of ultra-small Pt nanoparticle embedded devices were characterized by capacitance-voltage measurements. A unique tilt target sputtering configuration was employed to produce highly homogenous nanoparticle arrays. Pt nanoparticle devices with sizes ranging from ∼0.7 to 1.34 nm and particle densities of ∼3.3–5.9 × 1012 cm−2 were embedded between atomic layer deposited and e-beam evaporated tunneling and blocking Al2O3 layers. These GaAs-based non-volatile memory devices demonstrate maximum memory windows equivalent to 6.5 V. Retention characteristics show that over 80% charged electrons were retained after 105 s, which is promising for device applications.
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85.30.-z Semiconductor devices

Single-electron turnstile pumping with high frequencies

Chuan-Yu Lin and Wei-Min Zhang

Appl. Phys. Lett. 99, 072105 (2011); http://dx.doi.org/10.1063/1.3626585 (3 pages)

Online Publication Date: 16 August 2011

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In this letter, we present a theoretical analysis to single-electron pumping operation in a large range of driving frequencies through the time-dependent tunneling barriers controlled by external gate voltages. We show that the single-electron turnstile works at the frequency lower than the characteristic frequency which is determined by the mean average electron tunneling rate. When the driving frequency is greater than the characteristic frequency of electron tunnelings, fractional electron pumping occurs as an effect of quantum coherence tunneling.
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73.23.Hk Coulomb blockade; single-electron tunneling
73.40.Gk Tunneling
73.43.Jn Tunneling

Experimental validation of the exponential localized states distribution in the variable range hopping mechanism in disordered silicon films

L. Pichon and R. Rogel

Appl. Phys. Lett. 99, 072106 (2011); http://dx.doi.org/10.1063/1.3625944 (3 pages) | Cited 2 times

Online Publication Date: 16 August 2011

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Carriers transport in low temperature (≤600 °C) polycrystalline silicon thin film transistor channel region is studied for devices biased from weak to strong inversion. Analysis is supported by the theory of the 3D variable range hopping model due to hopping between localized electronic states near the Fermi level. The corresponding density of states is determined following an exponential (tail states) distribution associated with the statistical shift of the Fermi level.
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85.30.Tv Field effect devices

Detection of metallic In nanoparticles in InGaN alloys

T. A. Komissarova, V. N. Jmerik, S. V. Ivanov, and P. Paturi

Appl. Phys. Lett. 99, 072107 (2011); http://dx.doi.org/10.1063/1.3626039 (3 pages)

Online Publication Date: 16 August 2011

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We report on detection of metallic indium nanoparticles in the InxGa1−xN alloys grown by plasma-assisted molecular beam epitaxy at x exceeding 0.38 ± 0.03, using Hall effect measurements in a wide magnetic field range (up to 30 T). Observation of the abnormally increasing magnetic field dependences of the absolute value of Hall coefficient, approximated in the frames of the model taking into account influence of the highly conductive inclusions, was employed as a reliable criterion of presence of the In nanoparticles in the studied layers. The onset of In inclusions is governed by x rather than growth stoichiometric conditions.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag Semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects

A tunable electron wave filter based on graphene superlattices with periodic potential patterns

Zhang Hui-yun, Gao Ying, Zhang Yu-ping, Xu Shi-lin, and Wang Shi-fan

Appl. Phys. Lett. 99, 072108 (2011); http://dx.doi.org/10.1063/1.3626278 (3 pages) | Cited 8 times

Online Publication Date: 17 August 2011

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We have theoretically calculated a tunable electron wave filter based on graphene superlattices with one-dimensional periodic potentials. It is found that such structure with defect layer possess an unusual tunneling state occurring inside the forbidden gap, and the tunneling state can be modulated by changing the width of the defect layer. We have also achieved independently tunable multichannel electron wave filters by constructing fractal structures. The modulation of the transmission gap by width, period number, and incidence angle may lead to potential applications in graphene-based electronic devices.
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84.30.Vn Filters
73.21.Cd Superlattices
73.40.Gk Tunneling
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