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Applied Physics Letters / Volume 99 / Issue 8 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 99, 083116 (2011); http://dx.doi.org/10.1063/1.3628341 (3 pages)

Nanostructuring graphene on SiC by focused ion beam: Effect of the ion fluence

B. Prével1, J.-M. Benoit1, L. Bardotti1, P. Mélinon1, A. Ouerghi2, D. Lucot2, E. Bourhis2, and J. Gierak2

1Laboratoire de Physique de la Matière Condensée et Nanostructures, Université Lyon 1, CNRS, UMR 5586, Domaine Scientifique de la Doua, F-69622 Villeurbanne, France
2Laboratoire de Photonique et Nanostructure – CNRS, Route de Nozay, 91460 Marcoussis, France

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(Received 29 April 2011; accepted 1 August 2011; published online 26 August 2011)

Epitaxial graphene on silicon carbide labeled 6H-SiC (0001) substrate has been patterned using high resolution focused ion beam. Atomic force microscopy and Raman spectroscopy measurements give evidence of the strong resilience of the graphene monolayer to ion irradiation. The morphology and electronic properties of defects versus ion doses exhibit a progressive local amorphization of graphene.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

amorphisation, atomic force microscopy, epitaxial layers, focused ion beam technology, graphene, ion beam effects, nanofabrication, nanopatterning, nanostructured materials, Raman spectra

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3628341

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    J. B. Hannon and R. M. Tromp, Phys. Rev. B 77, 241404 (2008).

    Z. H. Ni, W. Chen, X. F. Fan, J. L. Kuo, T. Yu, A. T. S. Wee, and Z. X. Shen, Phys. Rev. B 77, 115416 (2008).

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    J. Röhrl, M. Hundhausen, K. V. Emtsev, Th. Seyller, R. Graupner, and L. Ley, Appl. Phys. Lett. 92, 201918 (2008)APPLAB000092000020201918000001.


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