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29 Aug 2011

Volume 99, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 99, 094101 (2011); http://dx.doi.org/10.1063/1.3629783 (3 pages)

Tomasz Szymborski, Piotr M. Korczyk, Robert Hołyst, and Piotr Garstecki
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Microstructure basis for strong piezoelectricity in Pb-free Ba(Zr0.2Ti0.8)O3-(Ba0.7Ca0.3)TiO3 ceramics

Jinghui Gao, Dezhen Xue, Yu Wang, Dong Wang, Lixue Zhang, Haijun Wu, Shengwu Guo, Huixin Bao, Chao Zhou, Wenfeng Liu, Sen Hou, Ge Xiao, and Xiaobing Ren

Appl. Phys. Lett. 99, 092901 (2011); http://dx.doi.org/10.1063/1.3629784 (3 pages) | Cited 19 times

Online Publication Date: 29 August 2011

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In this letter, we use transmission electron microscopy to study the microstructure feature of recently reported Pb-free piezoceramic Ba(Zr0.2Ti0.8)O3-x(Ba0.7Ca0.3)TiO3 across its piezoelectricity-optimal morphotropic phase boundary (MPB) by varying composition and temperature, respectively. The domain structure evolutions during such processes show that in MPB regime, the domains become miniaturized down to nanometer size with a domain hierarchy, which coincides with the d33-maximum region. Further convergent beam electron diffraction measurement shows that rhombohedral and tetragonal crystal symmetries coexist among the miniaturized domains. Strong piezoelectricity reported in such a system is due to easy polarization rotation between the coexisting nano-scale tetragonal and rhombohedral domains.
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77.65.-j Piezoelectricity and electromechanical effects
77.84.Cg PZT ceramics and other titanates
61.72.-y Defects and impurities in crystals; microstructure
81.30.Dz Phase diagrams of other materials
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis

Lithium diffusion in (Li, K, Na)NbO3 piezoeletric thin films and the resulting approach for enhanced performance properties

Phoi Chin Goh, Kui Yao, and Zhong Chen

Appl. Phys. Lett. 99, 092902 (2011); http://dx.doi.org/10.1063/1.3631761 (3 pages) | Cited 5 times

Online Publication Date: 29 August 2011

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Dramatic out-diffusion of lithium from (Li, K, Na)NbO3 (KNN-LN) thin films into substrate was identified as the cause of seriously degraded electrical properties. Utilizing the strong diffusion ability of lithium, lithium composition could be effectively introduced to the KNN film through the diffusion from the surface to the film. The distributions of the lithium diffused across the KNN films were found complementary to that of potassium, as lithium tended to be retained where A-site vacancies existed. With more lithium retained and reduced A-site vacancies, outstandingly large piezoelectric strain coefficient and voltage coefficient were demonstrated in the resulting Li-KNN film.
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77.84.Ek Niobates and tantalates
77.65.Bn Piezoelectric and electrostrictive constants
66.30.H- Self-diffusion and ionic conduction in nonmetals

Electromechanical properties of Al0.9Sc0.1N thin films evaluated at 2.5 GHz film bulk acoustic resonators

Ramin Matloub, Alvaro Artieda, Cosmin Sandu, Evgeny Milyutin, and Paul Muralt

Appl. Phys. Lett. 99, 092903 (2011); http://dx.doi.org/10.1063/1.3629773 (3 pages) | Cited 8 times

Online Publication Date: 30 August 2011

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AlN films are employed in RF filters for wireless communication. We report on enhanced coupling factors kt2 obtained by partial substitution of Al by Sc. Al0.88Sc0.12N films were deposited by reactive magnetron sputtering from an Al0.9Sc0.1 alloy target. They grew in the piezoelectric wurtzite phase with a similar microstructure as pure AlN films. The clamped d33,f increased considerably from 5.1 to 7.8 pm/V. The admittance measured at thin film bulk acoustic wave resonators was fitted to an equivalent circuit model and to 2-dimensional finite element simulation, yielding a kt2 of 7.3% and a quality factor of 650. The material softens considerably.
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77.65.Ly Strain-induced piezoelectric fields
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Ch Permittivity (dielectric function)
77.55.hd AlN
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
43.58.-e Acoustical measurements and instrumentation

Highly tunable microwave stub resonator on ferroelectric KTa0.5Nb0.5O3 thin film

Q. Simon, Y. Corredores, X. Castel, R. Benzerga, R. Sauleau, K. Mahdjoubi, A. Le Febvrier, S. Députier, M. Guilloux-Viry, L. Zhang, P. Laurent, and G. Tanné

Appl. Phys. Lett. 99, 092904 (2011); http://dx.doi.org/10.1063/1.3626040 (3 pages) | Cited 4 times

Online Publication Date: 30 August 2011

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A coplanar waveguide (CPW) stub resonator has been fabricated on a pulsed-laser deposited KTa0.5Nb0.5O3 (KTN) thin film (600 nm-thick) onto a r-plane sapphire substrate. It was designed to operate at 10 GHz when the applied bias voltage is zero. We show experimentally that the resonance frequency is shifted by 44% under a 70 kV/cm DC applied electric field. In addition, the dielectric characteristics of the KTN film have been assessed through post-processed measurements of CPW 50-Ω transmission lines using the conformal mapping method.
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84.40.Az Waveguides, transmission lines, striplines
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
81.15.Fg Pulsed laser ablation deposition

Effects of surface morphology on retention loss of ferroelectric domains in poly(vinylidenefluoride-co-trifluoroethylene) thin films

Hyunwoo Choi, Seungbum Hong, Tae-Hyun Sung, and Kwangsoo No

Appl. Phys. Lett. 99, 092905 (2011); http://dx.doi.org/10.1063/1.3632042 (3 pages) | Cited 2 times

Online Publication Date: 30 August 2011

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Effects of surface morphology on the retention loss of ferroelectric domains of poly(vinylidenefluoride-co-trifluoroethylene) thin films were investigated using piezoresponse force microscopy. We found that the retention loss occurred by nucleation of opposite domains at the regions with morphological gradients between 0.079 and 0.146. In addition, we observed collective decreases in piezoresponse amplitude of the opposite domains after 0.8 × 106 s, although each reversed domain showed different growth rate as evidenced by different threshold time for phase reversal. These results suggest that the surface morphology has a strong influence in determining the nucleation and growth kinetics by which the retention loss occurs.
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77.80.Dj Domain structure; hysteresis
68.35.bm Polymers, organics
68.55.am Polymers and organics
68.55.J- Morphology of films
77.55.fp Other ferroelectric films
61.41.+e Polymers, elastomers, and plastics

Photovoltaic effect in a wide-area semiconductor-ferroelectric device

R. K. Katiyar, A. Kumar, G. Morell, J. F. Scott, and R. S. Katiyar

Appl. Phys. Lett. 99, 092906 (2011); http://dx.doi.org/10.1063/1.3628318 (3 pages) | Cited 7 times

Online Publication Date: 2 September 2011

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Millimeter-diameter planar devices of glass/ZnO:Al/BiFeO3/La0.67Sr0.33CoO3 (LSCO) heterostructures were fabricated by pulsed laser deposition (PLD) techniques. Diode-like behavior with high short-circuit current (SSC ∼ 4 mA/cm2) and open-circuit voltage (OCV ∼ 0.22 V) was obtained under the illumination of about 1% of maximum solar energy. Impedance spectroscopy revealed that electrode/dielectric interface and grain-boundary conduction are mainly responsible for the photo-current. Electrode/dielectric interface, grain boundary impedance, and low-frequency ac conductivity change by almost three orders of magnitude under weak light. Relaxation time of the photo-carriers changes from 80 ms to 96 μs suggesting that with optimal collecting instruments, one should expect currents several orders higher.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.30.-z Semiconductor devices

Large digital-characterized electrostrain in Mn-doped (Pb,Sr)TiO3 electro-shape-memory ceramics

Wenfeng Liu, Lixue Zhang, Wei Chen, Shengtao Li, and Xiaobing Ren

Appl. Phys. Lett. 99, 092907 (2011); http://dx.doi.org/10.1063/1.3632079 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2011

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In the present letter, we report that through a reversible domain switching mechanism, a large electro-shape-memory effect (up to 0.23% under the electric field of 5 kV/mm) is achieved in the aged Mn-doped (Pb,Sr) TiO3 ceramics. We also provide the microscopic understanding on the relationship between the strain (ɛ) and field (E) curve with aging phenomenon. Different from the common analogue response (linear converse piezoelectric effect), such electrostrain exhibits a digital characteristic and consequently enables a promising “on-off” application. Owing to the domain switching nature, the key parameters (e.g., maximum strain, coercive field and working temperature range) of the present electrostrain can be customized by changing the ratio of Pb/Sr and thus the ratio of c/a to facilitate the possible practical applications.
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62.20.fg Shape-memory effect; yield stress; superelasticity
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
81.40.Lm Deformation, plasticity, and creep

Effects of volume evolution of static and dynamic polar nanoregions on the dielectric behavior of relaxors

Y. P. Shi and A. K. Soh

Appl. Phys. Lett. 99, 092908 (2011); http://dx.doi.org/10.1063/1.3632082 (3 pages) | Cited 4 times

Online Publication Date: 2 September 2011

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Recent experiments revealed unusual dielectric behaviors of Pb(Mg1/3Nb2/3)O3 originated from polar nanoregions (PNRs). Thus, Pauli’s master equation is adopted to investigate the distinct dielectric responses, correlation strength, and volume evolutions of static and dynamic PNRs. Our findings have not only validated the percolation theory but also ascertained Lorentzian distribution of the rate of thermal change of PNR volume. Finally, based on Maxwell’s equation the observed dielectric deviations of bulk permittivity from Curie-Weiss law are attributed to the thermal effects on static volume fraction and polarization rotation.
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77.80.Jk Relaxor ferroelectrics
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation
77.22.Jp Dielectric breakdown and space-charge effects
77.80.B- Phase transitions and Curie point
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