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29 Aug 2011

Volume 99, Issue 9, Articles (09xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 094101 (2011); http://dx.doi.org/10.1063/1.3629783 (3 pages)

Tomasz Szymborski, Piotr M. Korczyk, Robert Hołyst, and Piotr Garstecki
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Zinc-oxide-based planar nanodiodes operating at 50 MHz

Mustafa Y. Irshaid, Claudio Balocco, Yi Luo, Peng Bao, Christian Brox-Nilsen, and A. M. Song

Appl. Phys. Lett. 99, 092101 (2011); http://dx.doi.org/10.1063/1.3629995 (3 pages)

Online Publication Date: 29 August 2011

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Nanometer-scale self-switching devices (SSDs) fabricated in polycrystalline zinc oxide have been demonstrated up to at least 51.5 MHz, functioning as rectifiers to generate DC voltage. The SSDs require only a single nanolithography step and hence are of interest to low-cost printed electronics. The devices showed stable performance within the frequency range tested. The as-fabricated devices possessed strongly nonlinear current-voltage characteristics, resembling those of conventional diodes. After coating the devices with poly methyl methacrylate and poly vinylidene fluoride to enhance the electric field coupling, the nonlinear behavior was maintained while the device current increased dramatically.
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85.30.Kk Junction diodes
85.35.-p Nanoelectronic devices

Enhancing single-parameter quantum charge pumping in carbon-based devices

Luis E. F. Foa Torres, Hernán L. Calvo, Claudia G. Rocha, and Gianaurelio Cuniberti

Appl. Phys. Lett. 99, 092102 (2011); http://dx.doi.org/10.1063/1.3630025 (3 pages) | Cited 6 times

Online Publication Date: 29 August 2011

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We present a theoretical study of quantum charge pumping with a single ac gate applied to graphene nanoribbons and carbon nanotubes operating with low resistance contacts. By combining Floquet theory with Green’s function formalism, we show that the pumped current can be tuned and enhanced by up to two orders of magnitude by an appropriate choice of device length, gate voltage intensity, and driving frequency and amplitude. These results offer a promising alternative for enhancing the pumped currents in these carbon-based devices.
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85.35.Kt Nanotube devices

Strain modulated magnetization and colossal resistivity of epitaxial La2/3Ca1/3MnO3 film on BaTiO3 substrate

Z. X. Cheng, X. L. Wang, S. X. Dou, M. Osada, and H. Kimura

Appl. Phys. Lett. 99, 092103 (2011); http://dx.doi.org/10.1063/1.3633101 (3 pages) | Cited 3 times

Online Publication Date: 30 August 2011

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A sharp drop in resistance and a magnetization anomaly have been observed in La2/3Ca1/3MnO3 film in zero magnetic field at the BaTiO3 substrate structural phase transition temperature, due to the substrate clamping/strain effect, which is confirmed by Raman scattering. However, the anomalies for both resistance and magnetization were eliminated by a strong external magnetic field. These phenomena indicate that strain can cause colossal resistance and a change in magnetization which resembles the magnetic field effect. The interplay of the external forces (strain and magnetic field) is a good demonstration of the strong coupling between spin and lattice in colossal magnetoresistance materials.
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75.47.Gk Colossal magnetoresistance
75.30.Gw Magnetic anisotropy
75.30.Cr Saturation moments and magnetic susceptibilities
75.80.+q Magnetomechanical effects, magnetostriction
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

On the high-field transport and its temperature dependence in deca-nanometer fully depleted silicon-on-insulator field-effect-transistor

Masaharu Kobayashi, Jin Cai, and Wilfried Haensch

Appl. Phys. Lett. 99, 092104 (2011); http://dx.doi.org/10.1063/1.3626849 (3 pages)

Online Publication Date: 30 August 2011

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Low-temperature characterization has been performed on fully depleted silicon-on-insulator (FDSOI) field-effect-transistor (FET) with gate length (Lg) down to 25 nm to clarify transport mechanisms that determine device performance in deca-nanometer scale. Linear drain current of FDSOI FET follows Lg−1 scaling down to 25 nm Lg, where mobility dominates, while saturation drain current largely deviates from Lg−1 scaling. Temperature dependence of effective source velocity at high drain voltage (Vds) is weaker than that at low Vds in short Lg and is consistent with that of saturation velocity. Drift velocity measurement revealed velocity overshooting behavior at high lateral field, indicating further Lg scaling benefit.
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85.30.Tv Field effect devices

Efficient resistive memory effect on SrTiO3 by ionic-bombardment

Heiko Gross and Seongshik Oh

Appl. Phys. Lett. 99, 092105 (2011); http://dx.doi.org/10.1063/1.3633114 (3 pages) | Cited 6 times

Online Publication Date: 31 August 2011

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We show that ionic-bombardment leads to noticeable resistive memory effect on pure SrTiO3 (STO). In an Ar-bombarded STO crystal, two orders of resistance difference was observed between the high and low resistive states. We found that Ar-bombardment is more efficient than thermal-reduction in creating memory-effective oxygen vacancies. One of the advantages of the ionic-bombardment scheme is that it can be easily combined with lithographic processes to create spatially selective memory effect.
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72.20.Fr Low-field transport and mobility; piezoresistance
61.72.jd Vacancies
61.80.Jh Ion radiation effects
61.82.Ms Insulators
72.80.Sk Insulators

Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices

Yu-Ting Tsai, Ting-Chang Chang, Wei-Li Huang, Chih-Wen Huang, Yong-En Syu, Shih-Cheng Chen, Simon M. Sze, Ming-Jinn Tsai, and Tseung-Yuen Tseng

Appl. Phys. Lett. 99, 092106 (2011); http://dx.doi.org/10.1063/1.3629788 (3 pages) | Cited 5 times

Online Publication Date: 1 September 2011

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Dual bipolar resistive switching characteristics were observed in the Pt/DyMn2O5/TiN memory devices. The typical switching effect could be attributed to the formation and rupture of the conducting filament in DyMn2O5 films. The parasitic switching behavior can be observed in the specific operation condition. Dual bipolar resistance switching behaviors of filament-type and interface-type can coexist in the devices by appropriate voltage operation. The operating current can be significantly decreased (100 times) by parasitic switching operation for portable electronic product application. In addition, the relationship between filament-type and interface-type switching behaviors were studied in this paper.
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84.30.Sk Pulse and digital circuits

Metal/III-V effective barrier height tuning using atomic layer deposition of high-κ/high-κ bilayer interfaces

Jenny Hu, Krishna C. Saraswat, and H.-S. Philip Wong

Appl. Phys. Lett. 99, 092107 (2011); http://dx.doi.org/10.1063/1.3633118 (3 pages) | Cited 11 times

Online Publication Date: 1 September 2011

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In this work, we use thin dielectrics to reduce the Al/n-GaAs effective barrier height (ΦB,eff) of metal-insulator-semiconductor (MIS) contacts. We investigate the use of atomic layer deposition of HfO2, Al2O3, TiO2, ZrO2, and bilayer high-κ dielectrics and confirm there is a shift in the Fermi level that reduces the contact resistance. In studying high-κ/high-κ interfaces, we find that despite a thicker dielectric, there is further reduction in ΦB,eff beyond that of a single dielectric, which can be explained by the formation of a high-κ/high-κ dipole. This MIS structure provides great flexibility in the design of source/drain contacts for III-V transistors.
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85.40.Ls Metallization, contacts, interconnects; device isolation
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Ns Metal-nonmetal contacts
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Cg Contact resistance, contact potential

Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions

Wayne Y. Fung, Lin Chen, and Wei Lu

Appl. Phys. Lett. 99, 092108 (2011); http://dx.doi.org/10.1063/1.3633347 (3 pages) | Cited 1 time

Online Publication Date: 1 September 2011

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High performance Esaki tunnel diodes [L. Esaki, Phys. Rev. 109, 603 (1958)] based on small-diameter Ge/Si core/shell nanowires vertically grown on Si substrates are demonstrated. The devices exhibit pronounced negative differential resistance with peak-to-valley current ratio of 2.75, high peak current density of 2.4 kA/cm2, and high tunneling current density of 237 kA/cm2 at 1 V reverse bias, all obtained at room temperature. The peak current is found to increase with temperature and the data can be well explained with a band-to-band tunneling model. These results suggest that Si-Ge heterojunction with low defect density can be obtained for device applications such as tunnel diodes and tunnel field-effect transistors.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.De Semiconductor-device characterization, design, and modeling

Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies

Emre Gür, Zeng Zhang, Sriram Krishnamoorthy, S. Rajan, and S. A. Ringel

Appl. Phys. Lett. 99, 092109 (2011); http://dx.doi.org/10.1063/1.3631678 (3 pages) | Cited 3 times

Online Publication Date: 1 September 2011

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Schottky diode properties of semitransparent Ag(4 nm)/Au(4 nm) metal stack on In0.2Ga0.8N were investigated and defect characterization was performed using capacitance deep level transient (DLTS) and optical spectroscopy (DLOS). DLTS measurements made on the In0.2Ga0.8N Schottky diodes, which displayed a barrier height of 0.66 eV, revealed the presence of two deep levels located at Ec-0.39 eV and Ec-0.89 eV with nearly identical concentrations of ∼1.2 × 1015 cm−3. Three deeper defect levels were observed by DLOS at Ec-1.45 eV, Ec-1.76 eV, and Ec-2.50 eV with concentrations of 1.3 × 1015cm−3, 3.2 × 1015cm−3, and 6.1 × 1016 cm−3, respectively. The latter, with its high trap concentration and energy position lying 0.4 eV above the valance band, suggests a possible role in compensation of carrier concentration, whereas the mid-gap positions of the other two levels imply that they will be important recombination-generation centers
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85.30.Kk Junction diodes
71.55.Eq III-V semiconductors
78.40.Fy Semiconductors
85.30.Hi Surface barrier, boundary, and point contact devices

Hole mobility increase in ultra-narrow Si channels under strong (110) surface confinement

Neophytos Neophytou and Hans Kosina

Appl. Phys. Lett. 99, 092110 (2011); http://dx.doi.org/10.1063/1.3631680 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2011

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We report on the hole mobility of ultra-narrow [110] Si channels as a function of the confinement length scale. We employed atomistic bandstructure calculations and linearized Boltzmann transport approach. The phonon-limited mobility of holes in thin [110] channels can be improved by more than 3 × as the thickness of the (110) confining surface is reduced down to 3 nm. This behavior originates from confinement induced bandstructure changes that decrease the hole effective mass and the scattering rates. Our results provide explanations for recent mobility measurements in nanobelts of similar dimensions.
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72.20.Fr Low-field transport and mobility; piezoresistance
73.63.Bd Nanocrystalline materials
72.20.Ee Mobility edges; hopping transport
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