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29 Aug 2011

Volume 99, Issue 9, Articles (09xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 094101 (2011); http://dx.doi.org/10.1063/1.3629783 (3 pages)

Tomasz Szymborski, Piotr M. Korczyk, Robert Hołyst, and Piotr Garstecki
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Blue photoluminescence and Auger recombination of carriers in SrTiO3 nanoparticles

Yasuhiro Yamada, Keigo Suzuki, and Yoshihiko Kanemitsu

Appl. Phys. Lett. 99, 093101 (2011); http://dx.doi.org/10.1063/1.3626594 (3 pages) | Cited 1 time

Online Publication Date: 30 August 2011

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We studied photoluminescence (PL) spectrum and dynamics of SrTiO3 nanoparticles. A broad blue PL band is observed at around 2.9 eV in nanoparticle thin films. The excitation-density dependence of the blue PL intensity indicates that nonradiative Auger recombination dominates the carrier recombination process under strong photoexcitation. The intrinsic Auger recombination rate in SrTiO3 nanoparticles is much larger than that of SrTiO3 bulk crystals. The origin of enhanced Auger recombination in SrTiO3 nanoparticles is discussed.
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78.55.Hx Other solid inorganic materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
79.60.Bm Clean metal, semiconductor, and insulator surfaces
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.66.Li Other semiconductors

Memristor device based on carbon nanotubes decorated with gold nanoislands

A. Radoi, M. Dragoman, and D. Dragoman

Appl. Phys. Lett. 99, 093102 (2011); http://dx.doi.org/10.1063/1.3633352 (3 pages) | Cited 1 time

Online Publication Date: 30 August 2011

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Memristors are passive nanoelectronics devices with applications in memories and switches which, although not containing magnetic components, have as distinct signature a hysteresis loop in the current-voltage dependence. Even if the prototype material for memristors is a binary oxide, we demonstrate that such devices can be easily implemented using carbon nanotubes decorated with metallic nanoislands, where the hysteretic action is a result of the thermionic emission of electrons trapped in the gold nanoislands.
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84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
85.35.-p Nanoelectronic devices
85.65.+h Molecular electronic devices

Graphene bubbles with controllable curvature

T. Georgiou, L. Britnell, P. Blake, R. V. Gorbachev, A. Gholinia, A. K. Geim, C. Casiraghi, and K. S. Novoselov

Appl. Phys. Lett. 99, 093103 (2011); http://dx.doi.org/10.1063/1.3631632 (3 pages) | Cited 25 times

Online Publication Date: 30 August 2011

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Raised above the substrate and elastically deformed areas of graphene in the form of bubbles are found on different substrates. They come in a variety of shapes, including those which allow strong modification of the electronic properties of graphene. We show that the shape of the bubble can be controlled by an external electric field. This effect can be used to make graphene-based adaptive focus lenses.
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42.70.-a Optical materials
42.79.Bh Lenses, prisms and mirrors
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Lm Deformation, plasticity, and creep
62.20.dq Other elastic constants
62.20.F- Deformation and plasticity
61.48.Gh Structure of graphene

Isotope-induced elastic scattering of optical phonons in individual suspended single-walled carbon nanotubes

Pei Zhao, Erik Einarsson, Rong Xiang, Yoichi Murakami, Shohei Chiashi, Junichiro Shiomi, and Shigeo Maruyama

Appl. Phys. Lett. 99, 093104 (2011); http://dx.doi.org/10.1063/1.3632076 (3 pages) | Cited 2 times

Online Publication Date: 30 August 2011

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Isotope-induced scattering of optical phonons in individual single-walled carbon nanotubes (SWNTs) was investigated by resonance Raman scattering measurements of more than 600 suspended, isotope-mixed SWNTs. The G+ and G− features in the SWNT G-band exhibit broadening of up to 80% and 25%, respectively, indicating a reduced lifetime of the corresponding longitudinal and transverse optical (LO and TO) phonons. We propose that this reduced lifetime is due to a combination of enhanced phonon scattering by isotopic inhomogeneity and overbending in the LO phonon branch, both of which increase the scattering rate.
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78.30.Na Fullerenes and related materials
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
63.22.Rc Phonons in graphene

Direct microwave transmission on single α-hemolysin pores

Sujatha Ramachandran, Daniel W. van der Weide, and Robert H. Blick

Appl. Phys. Lett. 99, 093105 (2011); http://dx.doi.org/10.1063/1.3626586 (3 pages) | Cited 2 times

Online Publication Date: 31 August 2011

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We integrated an ultra-broadband microwave circuit for direct sampling of single α-Hemolysin pores in a suspended bilipid membrane. Simultaneous direct current recordings reveal that we can monitor and correlate the radio-frequency transmission signal, with correspondence between open-close states of the direct current and the RF signals. This proves the ability of an RF-readout technique to perform real-time in-vitro recordings of pores. The technique thus holds great promise for research and drug screening applications, since the sampling rate of single channels can be drastically enhanced and the recording bandwidth allows for tracking the passage of single ions.
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87.80.-y Biophysical techniques (research methods)
87.16.Vy Ion channels
87.16.dp Transport, including channels, pores, and lateral diffusion
87.14.Cc Lipids
87.14.E- Proteins
84.40.Dc Microwave circuits

Efficient energy transfer from hole transporting materials to CdSe-core CdS/ZnCdS/ZnS-multishell quantum dots in type II aligned blend films

Pengtao Jing, Xi Yuan, Wenyu Ji, Michio Ikezawa, Xueyan Liu, Ligong Zhang, Jialong Zhao, and Yasuaki Masumoto

Appl. Phys. Lett. 99, 093106 (2011); http://dx.doi.org/10.1063/1.3633110 (3 pages) | Cited 6 times

Online Publication Date: 1 September 2011

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We studied the energy transfer between CdSe core/shell quantum dots (QDs) and hole transporting materials (HTMs) in type II aligned inorganic/organic blend films by using steady-state and time-resolved photoluminescence (PL) spectroscopy. The lengthening and shortening in PL lifetimes of the QDs in HTMs under resonant excitation condition were explained by energy transfer and charge separation processes. Surprisingly, the maximum energy transfer efficiency from 4,4′,4″-Tris (carbazol-9-yl)-triphenylamine (TcTa) to CdSe/CdS/ZnCdS/ZnS core/multishell QDs was determined to be 86% by calculating the excited state lifetime of the TcTa molecules participating in the energy transfer process.
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78.67.Hc Quantum dots
78.55.Et II-VI semiconductors
78.47.jd Time resolved luminescence

Tumbling motion yielding fast displacements of synthetic antiferromagnetic nanoparticles for biological applications

T. Courcier, H. Joisten, P. Sabon, S. Leulmi, T. Dietsch, J. Faure-Vincent, S. Auffret, and B. Dieny

Appl. Phys. Lett. 99, 093107 (2011); http://dx.doi.org/10.1063/1.3633121 (3 pages) | Cited 2 times

Online Publication Date: 1 September 2011

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Synthetic antiferromagnetic micro/nanoparticles usable for biological applications were recently developed using a top-down approach, made of alternating NiFe layers and non magnetic Ru spacers. We describe here different types of motions of magnetic particles chains, controlled either by field gradients or alternating magnetic fields and combination of both. Of particular interest is a displacement named “tumbling motion” consisting in a combination of rotation and translation, with friction on the bottom surface of the container, as a bicycle wheel on a horizontal surface. This motion yields a translation speed 10–30 times faster than by using conventional gradient of magnetic field.
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75.75.-c Magnetic properties of nanostructures
75.50.Ee Antiferromagnetics
75.50.Tt Fine-particle systems; nanocrystalline materials
87.85.J- Biomaterials
62.20.Qp Friction, tribology, and hardness
81.40.Pq Friction, lubrication, and wear

Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals

A. W. Wood, X. Weng, Y. Q. Wang, and R. S. Goldman

Appl. Phys. Lett. 99, 093108 (2011); http://dx.doi.org/10.1063/1.3617464 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2011

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We have examined the formation of InN nanocrystals embedded in InAs. Low temperature (77K) N ion implantation into InAs leads to the formation of an amorphous layer with crystalline InAs remnants. Rapid thermal annealing up to 550 °C leads to the nucleation of zincblende InN nanocrystals with a maximum likelihood radius of 1.3 ± 0.2 nm. Rapid thermal annealing at 600 °C leads to nucleation of zincblende and wurtzite InN, with an increase in maximum likelihood radius to 2.6 ± 0.4 nm. These results are consistent with the predictions of a thermodynamic model for the nanoscale-size-dependence of zincblende and wurtzite InN nucleation.
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81.16.-c Methods of micro- and nanofabrication and processing
61.72.uj III-V and II-VI semiconductors
65.40.G- Other thermodynamical quantities
81.05.Ea III-V semiconductors
81.05.Gc Amorphous semiconductors
81.07.Bc Nanocrystalline materials
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