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29 Aug 2011

Volume 99, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 99, 094101 (2011); http://dx.doi.org/10.1063/1.3629783 (3 pages)

Tomasz Szymborski, Piotr M. Korczyk, Robert Hołyst, and Piotr Garstecki
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Dense and uniform Au nanospheres on glass through confined nanosecond pulsed laser irradiation

Yingling Yang, Martin Y. Zhang, and Gary J. Cheng

Appl. Phys. Lett. 99, 091901 (2011); http://dx.doi.org/10.1063/1.3633123 (3 pages) | Cited 1 time

Online Publication Date: 29 August 2011

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We utilize confined nanosecond pulsed laser irradiation to fabricate one monolayer of gold nanospheres on glass, with narrow size distribution and high packing densities. With a laser fluence of ∼400 mJ/cm2, the size of the nanospheres is as small as ∼50 nm and the packing density is as high as ∼2 × 1010 cm−2. The light heating efficiency is higher for smaller size nanospheres, so the heating and sphere regrowing process naturally results in the narrow size distribution for the gold nanospheres.
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81.07.Bc Nanocrystalline materials
81.40.Gh Other heat and thermomechanical treatments
81.16.Mk Laser-assisted deposition
81.15.Fg Pulsed laser ablation deposition
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

First-principles generalized gradient approximation + U study of cubic CuAl2O4

Qi-Jun Liu and Zheng-Tang Liu

Appl. Phys. Lett. 99, 091902 (2011); http://dx.doi.org/10.1063/1.3630131 (3 pages)

Online Publication Date: 29 August 2011

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We have investigated the electronic, magnetic, mechanical, and optical properties in cubic CuAl2O4 by a first-principles ultrasoft pseudopotential of the plane-wave within the density-functional theory (DFT) plus the generalized gradient approximation (GGA) + U (Hubbard parameter) formalism. We find the polarized hole dz2 character induced the dz2 magnetic orbital ordering and the p-d hybridization results in the covalent bonding between Cu and O. The origins of electrons transitions in dielectric function are consistent with electronic structure aroused by crystal-field and Janhn-Teller effect.
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71.20.Ps Other inorganic compounds
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
75.10.Dg Crystal-field theory and spin Hamiltonians
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Improving thermal stability of hard coating films via a concept of multicomponent alloying

H. Lind, R. Forsén, B. Alling, N. Ghafoor, F. Tasnádi, M. P. Johansson, I. A. Abrikosov, and M. Odén

Appl. Phys. Lett. 99, 091903 (2011); http://dx.doi.org/10.1063/1.3631672 (3 pages) | Cited 13 times

Online Publication Date: 29 August 2011

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We propose a design route for the next generation of nitride alloys via a concept of multicomponent alloying based on self-organization on the nanoscale via a formation of metastable intermediate products during the spinodal decomposition. We predict theoretically and demonstrate experimentally that quasi-ternary (TiCrAl)N alloys decompose spinodally into (TiCr)N and (CrAl)N-rich nanometer sized regions. The spinodal decomposition results in age hardening, while the presence of Cr within the AlN phase delays the formation of a detrimental wurtzite phase leading to a substantial improvement of thermal stability compared to the quasi-binary (TiAl)N or (CrAl)N alloys.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.30.Mh Solid-phase precipitation
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
65.40.-b Thermal properties of crystalline solids
68.35.Gy Mechanical properties; surface strains

Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics

Changjae Yang, Sangsoo Lee, Keun Wook Shin, Sewoung Oh, Jinsub Park, Chang-Zoo Kim, Won-Kyu Park, Seung-kyu Ha, Won Jun Choi, and Euijoon Yoon

Appl. Phys. Lett. 99, 091904 (2011); http://dx.doi.org/10.1063/1.3623757 (3 pages) | Cited 5 times

Online Publication Date: 30 August 2011

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Optical properties of Si-doped GaInP grown on Ge-on-Si substrates were investigated using photoluminescence (PL). Similar to spontaneously ordered GaInP, two peaks were observed around 1.74 and 1.85 eV at 19 K; however, no satellite peaks were observed in the selected-area diffraction pattern. Based on temperature-dependent PL, the peak at 1.74 eV was attributed to the donor–acceptor pair transition caused by the amphoteric characteristics of Si and/or Ge from the dopant and/or substrate. In addition, the S-shape in the temperature dependence of the 1.85 eV peak was attributed to the interaction of the donor levels with the conduction band of GaInP.
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68.55.ag Semiconductors
71.20.Nr Semiconductor compounds
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Tuning thermal transport in nanotubes with topological defects

Jian Wang, Liang Li, and Jian-Sheng Wang

Appl. Phys. Lett. 99, 091905 (2011); http://dx.doi.org/10.1063/1.3631725 (3 pages) | Cited 3 times

Online Publication Date: 30 August 2011

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Using the atomistic nonequilibrium Green’s function, we find that thermal conductance of carbon nanotubes with presence of topological lattice imperfects is remarkably reduced, due to the strong Rayleigh scattering of high-frequency phonons. Phonon transmission across multiple defects behaves as a cascade scattering based with the random phase approximation. We elucidate that phonon scattering by structural defects is related to the spatial fluctuations of local vibrational density of states (LVDOS). An effective method of tuning thermal transport in low-dimensional systems through the modulation of LVDOS has been proposed. Our findings provide insights into experimentally controlling thermal transport in nanoscale devices.
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61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems
02.30.-f Function theory, analysis
05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion
61.72.-y Defects and impurities in crystals; microstructure
63.20.-e Phonons in crystal lattices
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Zero-phonon emission and magnetic polaron parameters in EuTe

A. B. Henriques, G. D. Galgano, E. Abramof, B. Diaz, and P. H. O. Rappl

Appl. Phys. Lett. 99, 091906 (2011); http://dx.doi.org/10.1063/1.3634030 (3 pages) | Cited 1 time

Online Publication Date: 31 August 2011

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A phonon structure in the photoluminescence of EuTe was discovered, with a well-defined zero-phonon emission line (ZPL). The ZPL redshifts linearly with the intensity of applied magnetic field, indicating spin relaxation of the photoexcited electron, and saturates at a lower magnetic field than the optical absorption bandgap, which is attributed to formation of magnetic polarons. From the difference in these saturation fields, the zero-field polaron binding energy and radius are estimated to be 43 meV and 3.2 (in units of the EuTe lattice parameter), respectively.
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78.20.-e Optical properties of bulk materials and thin films
78.55.-m Photoluminescence, properties and materials
78.20.Ls Magneto-optical effects
71.20.Nr Semiconductor compounds
71.38.-k Polarons and electron-phonon interactions

Graphitization of amorphous carbon on a multiwall carbon nanotube surface by catalyst-free heating

Koji Asaka, Motoyuki Karita, and Yahachi Saito

Appl. Phys. Lett. 99, 091907 (2011); http://dx.doi.org/10.1063/1.3630132 (3 pages) | Cited 5 times

Online Publication Date: 1 September 2011

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Structural changes in amorphous carbon coating the surfaces of multiwall carbon nanotubes (MWNTs) under applying an electric current were investigated by in situ transmission electron microscopy with simultaneous measurements of the bias voltage and electric current. Joule heating transformed amorphous carbon on the surfaces of individual MWNTs suspended between gold electrodes into graphite layers even without a metal catalyst through a phase of glasslike carbon. The MWNTs after the formation of ordered surface layers sustained a high current with a density of up to 3.1 × 108 A/cm2.
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81.16.-c Methods of micro- and nanofabrication and processing
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.40.Gh Other heat and thermomechanical treatments
61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.07.De Nanotubes

Effect of compressive stress on stability of N-doped p-type ZnO

Xingyou Chen, Zhenzhong Zhang, Bin Yao, Mingming Jiang, Shuangpeng Wang, Binghui Li, Chongxin Shan, Lei Liu, Dongxu Zhao, and Dezhen Shen

Appl. Phys. Lett. 99, 091908 (2011); http://dx.doi.org/10.1063/1.3631677 (3 pages) | Cited 4 times

Online Publication Date: 1 September 2011

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Nitrogen-doped p-type zinc oxide (p-ZnO:N) thin films were fabricated on a-/c-plane sapphire (a-/c-Al2O3) by plasma-assisted molecular beam epitaxy. Hall-effect measurements show that the p-type ZnO:N on c-Al2O3 degenerated into n-type after a preservation time; however, the one grown on a-Al2O3 showed good stability. The conversion of conductivity in the one grown on c-Al2O3 ascribed to the faster disappearance of NO and the growing N2(O), which is demonstrated by x-ray photoelectron spectroscopy (XPS). Compressive stress, caused by lattice misfit, was revealed by Raman spectra and optical absorption spectra, and it was regarded as the root of the instability in ZnO:N.
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73.61.Ga II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
78.66.Hf II-VI semiconductors
81.05.Dz II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
72.20.My Galvanomagnetic and other magnetotransport effects

Donor bound excitons involving a hole from the B valence band in ZnO: Time resolved and magneto-photoluminescence studies

S. L. Chen, W. M. Chen, and I. A. Buyanova

Appl. Phys. Lett. 99, 091909 (2011); http://dx.doi.org/10.1063/1.3628332 (3 pages) | Cited 3 times

Online Publication Date: 1 September 2011

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See Also: Erratum

Show Abstract
Time-resolved and magneto-photoluminescence (PL) studies are performed for the so-called I6B and I7B excitonic transitions, previously attributed to neutral donor bound excitons involving a hole from the B valence band (VB), D0XB. It is shown that PL decays of these emissions at 2 K are faster than that of their I6 and I7 counterparts involving an A VB hole, which is interpreted as being due to energy relaxation of the hole assisted by acoustic phonons. From the magneto-PL measurements, values of effective Landé g factors for conduction electrons and B VB holes are determined as ge = 1.91, gh// = 1.79, and gh⊥ = 0, respectively.
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78.55.Et II-VI semiconductors
71.35.-y Excitons and related phenomena
71.55.Gs II-VI semiconductors
78.47.jd Time resolved luminescence
78.20.Ls Magneto-optical effects

Carrier capture into semiconductor quantum dots via quantum wire barriers: Localization and thermionic emission effects

J. Szeszko, Q. Zhu, P. Gallo, A. Rudra, and E. Kapon

Appl. Phys. Lett. 99, 091910 (2011); http://dx.doi.org/10.1063/1.3628320 (3 pages)

Online Publication Date: 2 September 2011

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Carrier transport and capture paths via barriers of different dimensionality in AlGaAs/GaAs quantum wire (QWR)/quantum dot (QD) heterostructures, grown in inverted pyramids, are studied by photoluminescence (PL) spectroscopy. Evidence for thermally activated diffusion related to potential disorder in the QWR barriers and thermionic emission of carriers from the QD into the QWR barrier is observed in temperature dependent PL spectra. Similar activation energies for the thermionic emission are derived from the continuous-wave and time-resolved PL spectroscopy.
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72.20.Fr Low-field transport and mobility; piezoresistance
78.55.Cr III-V semiconductors
79.40.+z Thermionic emission
68.65.Hb Quantum dots (patterned in quantum wells)
73.63.Kv Quantum dots
78.67.Hc Quantum dots
66.30.Pa Diffusion in nanoscale solids
68.65.La Quantum wires (patterned in quantum wells)
73.21.Hb Quantum wires
73.63.Nm Quantum wires
78.67.Lt Quantum wires
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