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Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor
Jin-Woo Han, Jae Sub Oh, and M. Meyyappan
This paper presents the details of a planar lateral air transistor fabricated using standard Silicon semiconductor processing. This is potentially suited for high performance and low power applications. The advantages of this structure are superior gate controllability and negligible gate leakage current due to the adoption of the gate insulator.
Appl. Phys. Lett. 100, 213505 (2012) | HTML | PDF | Top Stories | Editor's Picks collection
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